SELDOM · SElective Deposition Of 2D Materials
Horizon 2020 — Marie Skłodowska-Curie Actions
- Duration
- 2016-04-01 → 2018-03-31
- EU contribution
- €172,800
- Participants
- 1
- Scheme
- MSCA-IF
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Results in brief
SElective Deposition Of 2D Materials
Over the past decades, exponential gains in computational power have allowed unprecedented progress in innovation, economic growth and human welfare. This expected progress (following Moore’s law) now becomes threatened by an end to the gains in computing power, as we have reached the limit of what seems possible with traditional scaling of silicon based devices. Accordingly, self-aligned processing will be required for a better controlled patterning overlay and edge placement in the next generation semiconductor devices. Selective deposition can be applied to enable self-aligned processing, as the selectively grown film is aligned to a pre-existing pattern. Therefore, selective deposition provides an alternative “bottom up” method for patterning for the fabrication of nanostructures and nanoscale devices, in contrast to the conventional “top-down” approach of deposition, patterning by lithography and etch. In addition, to further improve the performance of nano-electronic devices, the introduction of novel materials with enhanced properties is necessary, as well as novel device concepts. Among the potential materials investigated for future generations of semiconductors, 2D materials such transition metal chalcogenides (MX2 with M being a transition metal and X a chalcogenide) are of great interest. These materials adopt a layered nanostructure (two dimensional crystal) with tunable electronic properties. The main objective of the SELDOM project is to gain insight in the surface dependence of MX2 deposition processes, and to apply this understanding to enable their selective deposition. The newly found insight is then applied for the realization of a MX2 hetero-stack. This hetero-stack is a potentially new key component for the development of novel Tunnel Field Effect Transistor (TFET), a low energy, and highly promising candidate to replace the conventional metal-oxide-semiconductor field-effect transistors (MOSFETS).
Data: CORDIS, © European Union
Project objective
SELDOM aims to generate the scientific understanding needed to design area-selective deposition approaches for transition metal dichalcogenides (MX2), a class of inorganic 2D materials that recently attracts great interest for nano-electronic applications. We will investigate the substrate dependence and nucleation mechanisms of MX2 Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD). This substrate dependence will be exploited to attain selectivity. Finally, the findings can directly be applied to demonstrate selective deposition of an MX2A/MX2B hetero-stack, a key component for the future development of Tunnel Field effect transistor (TFET). As one of the largest independent research centers in the field of nanotechnology and electronics, imec will provide excellent infrastructure and expertise in semiconductor technology. Two cleanrooms, the device production line, and numerous thin film deposition and characterization techniques are available to conduct the research. The SELDOM project will combine the experience of Prof. A. Delabie who has an extensive track-record in thin film research and semiconductor processing and the knowledge of Dr. Y. Tomczak in surface reaction mechanisms of ALD. The candidate will apply his expertise to explore a new class of materials, the 2D materials. He will broaden his existing expertize on deposition and characterization to 2D materials and the substrate dependence and nucleation mechanisms of thin film deposition techniques. He will apply his extended insight in surface chemistry to design novel selective deposition processes. He will work in a multidisciplinary team of physicists, chemists, process and electrical engineers and develop his personal skills by undertaking project management and coaching of students. This project and training activities will enhance the career prospect of the candidate by establishing contacts with the semiconductor community while conducting industrially relevant research.
Original text from CORDIS.
Participants
- INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM · LeuvenCoordinatorBelgium
Links
Data: CORDIS, © European Union