H2020Individual fellowship2018–2020

PARADA · Parallel Donor and Acceptor Semiconductor Crystals for Organic Field Effect Transistors

Horizon 2020 — Marie Skłodowska-Curie Actions

Duration
2018-06-01 → 2020-05-31
EU contribution
€172,800
Participants
1
Scheme
MSCA-IF-EF-ST

Lines connect the coordinator with its partners.

Results in brief

Parallel Donor and Acceptor Semiconductor Crystals for Organic Field Effect Transistors

Organic electronics is an active research field aiming at the use of organic semiconductors in various optoelectronic applications, such as organic light-emitting diodes or organic field-effect transistors (OFETs). The essential characteristic of organic semiconductors is their ability to transport electrical charges that are either holes, h+, or electrons, e-. Organic semiconductors are of two types: conjugated polymers, which exhibit various degrees of order, and molecular crystals. Performances are, mainly, assessed by the charge carrier mobility µ (cm2/V.s), i.e. the higher, the better. Molecular semiconductors outperform conjugated polymers because charge transport is faster in highly ordered media. Not surprisingly, the highest µ values have been measured for OFETs fabricated with single crystals of molecular semiconductors, because of the absence of grain boundaries. As a general matter of fact, conjugated compounds can transport both h+ and e-. It is, however, observed that semiconductors with electron-donating (withdrawing) groups form more stable radical cations (anions). Few semiconductors exhibit ambipolar charge transport, but more interesting in view of industrial applications is the complementary logic that is possible with simple circuits composed of both p-type & n-type OFETs. Single crystal OFETs have been fabricated with both p-type & n-type molecular semiconductors. However, the fabrication is tedious and requires growing single crystals, to select the best ones in terms of size and shape, and to delicately connect them between source & drain electrodes. Crystals are grown by the physical transport method that is a vapor deposition technique. Overall, such a tedious fabrication method resembles more to craftwork than to technology. Research on OFETs is of great significance because they can be used as control elements in flat panel displays, as parts of radio frequency identification card (RFID), electronic skin (E-skin), and other flexible electronic materials. The PARADA project was mainly devoted to studying crystallographic problems in the field of OFETs and developing organic single-crystal thin films with the coexistence of p-type & n-type organic semiconductors, using directional crystallization as a tool. These single-crystal stripes were designed to fabricate single-crystal transistors able to operate in complementary logic mode. Therefore, the knowledge and results produced from the PARADA project will contribute to both fundamental and applied sciences. By the PARADA project, we successfully demonstrate that the parallel p-type & n-type OSCs thin-film crystals can be prepared by a temperature gradient approach. And the uniaxial in-plane alignment of crystallites along the temperature gradient direction was observed in the blended thin films.

Data: CORDIS, © European Union

Project objective

Organic field-effect transistors (0FETs) are essential building blocks for the next generation of cheap and flexible organic circuits. Complementary logic composed of both p- and n-type OFETs with high mobility are absolutely needed to fabricate performing electronic circuits. Generally, single crystals of small molecules of organic semiconductors (OSC) exhibit higher charge carrier mobility than polycrystalline films because of the absence of grain boundaries. Unfortunately, the growth of single crystals from solution or vapor involves little or poor control of orientation, size and shape of single crystals. To solve this problem, PARADA proposes a radically new approach that relies on directional crystallization as a tool to grow parallel single crystal stripes of p- and n- type molecular semiconductors from eutectic mixtures to fabricate single crystal transistorswhich are able to operate in complementary logic mode. Eutectic mixtures will be composed of derivatives of benzothienobenzothiophene (BTBT) and derivatives of carboxydiimides (NTCDI) that are among the best performing p- and n-type semiconductors, respectively. A large set of crystallization conditions will be used to control the pattern and themorphology of thin films. Full structural and morphological characterization will be carry out by XRD, POM and AFM. Thin films with parallel crystalline stripes will be used to fabricate p- and n-type OFETs. The values of electron mobility in the n-type semiconductor and hole mobility in the p-type semiconductor will be extracted from devices. They are anticipated to exceed 5 cm2/V.s. The device work will be completed by basic electrical circuit to demonstrate complementary logic. PARADA combines fundamental and applied research and integrates a broad range a research fields: nucleation and growth of molecular semiconductors, microfabrication, and device physics.

Original text from CORDIS.

Participants

  • UNIVERSITE LIBRE DE BRUXELLES · Bruxelles / BrusselCoordinatorBelgium

Links

Data: CORDIS, © European Union