ECOMAT · Encapsulation and contacting of two-dimensional materials
Horizon 2020 — Marie Skłodowska-Curie Actions
- Duration
- 2018-06-01 → 2020-05-31
- EU contribution
- €159,461
- Participants
- 1
- Scheme
- MSCA-IF-EF-SE
Lines connect the coordinator with its partners.
Results in brief
Encapsulation and contacting of two-dimensional materials
In this project the encapsulation and contacting of graphene and MoS2 was investigated. Graphene is one monolayer of carbon arranged a two dimensional (2D) honeycomb lattice, which is very promising for several applications in the semiconductor technology. The remarkable performance of the first experimental graphene devices gave rise to a new era of atomically thin materials in solid-state electronics. After some years so-called 2D materials beyond graphene began to be studied, for example transition metal dichalcogenides (TMDCs) that are atomically thin semiconductors of the type MX2, where a transition metal atom (M = Mo, W, We and so on) is sandwiched between two chalcogen atoms (X = S, Se, Te and so on). The advantage of TMDs over graphene, which conducts electricity very well, is that they are true semiconductors, which makes them perfectly suited for electronics and optoelectronics applications. But one problem remains the same: a device fabrication that retains the properties of these materials and approaches values close to what is theoretically possible. Although significant research has been performed, we still lack the knowledge of how to build a device that works with 100% of possible performance. Especially the interfaces on top of 2D materials are critical for the overall device performance, and suitable deposition techniques for them need to be developed. This project had as objectives to study the oxide deposition by means of atomic layer deposition on top of graphene and MoS2 and to build different kinds of test devices to assess their performance. In addition, contacting 2D materials with ohmic contacts after their encapsulation was investigated.
Data: CORDIS, © European Union
Project objective
Two dimensional materials such as graphene and transition metal dichalcogenide (TMDC) are very sensitive to surface adsorbates and thus require proper encapsulation. In addition, functional devices based on those materials, like transistors, diodes or electro-optical modulators require high-k gate dielectrics to be deposited on top of the material. However, the deposition of high quality dielectric layers ontop of 2D materials is very challenging due to their inert surface. The project ECOMAT addresses the important challenge of depositing high-k dielectrics on top of 2D materials. In particular, the experienced researcher Dr. Barbara Canto will explore different routes to encapsulate graphene and MoS2, which is the most explored TMDC material, with different high-k dielectrics using a combination of atomic layer deposition and surface functionalization using seed layers. The key control parameters for those layers are dielectric constant, breakdown voltage, charge traps, minimal thickness achievable, and gas barrier properties, which will be characterized by electrical and spectroscopic methods. Finally a new route for fabricating low-resistive edge contacts to MoS2 will be explored, building up on encapsulated MoS2 layers. This contacting scheme is expected to significantly reduce contamination of the MoS2 layer during processing, while offering low-resistive contacts and thus will significantly increase the performance of electronic device based on MoS2.This interdisciplinary research activity builds up on the experience of Dr. Canto in the field of material science and physics and utilizes the infrastructure and knowledge at AMO on high-k dielectrics and electronic devices.
Original text from CORDIS.
Participants
- GESELLSCHAFT FUR ANGEWANDTE MIKRO UND OPTOELEKTRONIK MIT BESCHRANKTERHAFTUNG AMO GMBH · AachenCoordinatorGermany
Links
Data: CORDIS, © European Union