TRAPS-2D · Understanding The Role of the defects to Accomplish high Performance and Stable Two Dimensional Devices
Horizon 2020 — Marie Skłodowska-Curie Actions
- Duration
- 2020-11-01 → 2022-12-31
- EU contribution
- €165,667
- Participants
- 2
- Scheme
- MSCA-IF
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Results in brief
Understanding The Role of the defects to Accomplish high Performance and Stable Two Dimensional Devices
In the last decades, semiconductor chips have had to increase the performance while reducing their size to accomplish the market requirements according to the Moore’s Law. However, to support more scaled process technologies, other alternatives must be addressed. In this regard, two-dimensional materials (2D), led by the graphene discovery in 2004, have attracted tremendous attention due to their promising electrical properties. Thanks to their low dimensionality, these thin materials present an optimal electrostatic control of the channel, high electrical mobility, flexibility and extremely sensitive capabilities to the changes in their surroundings. In this regard, the integration of 2D materials with standard silicon technology could seem particularly interesting to achieve a more interconnected society, accessibility to internet of things and clean energy transition thanks to the improvement of the energy storage technologies and the transparent features which some of these materials present. However, there are still technological limitations regarding the two-dimensional material integration in semiconductor fabrication flow: i) most studies that explore TMDs obtain films using methods that are not scalable, such as mechanical exfoliation or methods that are not CMOS compatible like synthesis at high temperatures. ii) the devices rarely accomplish the promising theoretical properties for these 2D materials. Defects and impurities inducing Fermi level pinning at the metal interfaces, Schottky-barrier formation, current hysteresis or Coulomb scattering are some of the reliability issues that the fabricated 2D devices present.
Data: CORDIS, © European Union
Project objective
Dr. Marquez proposes a new approach to improve the performance of 2D materials: the defect-engineering. This approach aims to investigate the critical issue of defects implication on the 2D semiconductors operation to solve the low performance and to accomplish a future CMOS co-integration. Electrically activated interfaces, surface and oxide states have demonstrated not only to reduce the device performance but also making the device to behave in a determine operation. Surface defect have shown metal workfunction pinning and therefore formation of Schottky barriers at the contact-semiconductor interface. In addition, depending on the energy level these defect, they can contribute like donor or acceptor dopant or like generation-recombination (trap) centers. In this regard, the fabricated devices would operate differently, presenting n-type, ambipolar or p-type behavior and accumulation or inversion operation modes. Fast operating, normally-on or normally-of devices can be addressed controlling the defect implications. The understanding and control of these defect states and impurities in 2D semiconductor systems is an essential area of research, and the first step is to develop the metrology tools to accurately quantify defect densities and distributions gaining further insight into the possible origin of the defects states. “TRAPS-2D” is a proposal to systematical study of defect (trap) states implications on 2D materials. Its novelty resides in the control of these defects to force the fabricated devices to operate in a specific mode and therefore control their performance. Additionally, the proposal holds an important technological transfer aspect considering the co-integration of these 2D materials in the standard CMOS processes to open the doors to ultimate commercial electronic applications.
Original text from CORDIS.
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Data: CORDIS, © European Union