UNOGAN · Unveiling down to 0-dimensional confinements in GaN devices for RF power application
Horizon 2020 — Marie Skłodowska-Curie Actions
- Duration
- 2020-10-10 → 2022-10-09
- EU contribution
- €166,320
- Participants
- 1
- Scheme
- MSCA-IF
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Results in brief
Unveiling down to 0-dimensional confinements in GaN devices for RF power application
GaN is rapidly becoming the first choice of semiconductor for power conversion and their presence is emerging in a wide range of applications from fast charging of batteries, electric vehicles etc. to high-end solutions like light detection and ranging devices. Despite exhibiting properties that allow for higher breakdown strength, faster switching speed and low switching losses, the technological challenges in their processing impacts the final device performance and hinders the replacement of incumbent Si-based switching devices by more efficient ones. Overcoming such challenges will increase the incorporation of these energy efficient GaN devices in widespread applications, which advances our effort in reducing energy consumption and greenhouse gas emission. UNOGAN has identified that one such challenge is related to the difficulty in assessing defects and doping issues induced in a fully processed device. Its overall objective was to develop a set of methodologies built on existing scanning probe microscopy (SPM) techniques to provide a visualizing aid to pinpoint the spatial location of these issues in a fully processed device stack. Achieving this target strictly required the completion of the following actions: (i) Identifying bottlenecks of the methodologies (electrical contacts, specimen preparation and type of probes) and overcoming them (WP1,2) (ii) Establishing the methodology on GaN device stacks (WP2,4) The project also created a platform for in-operando measurements, that could be used to probe fundamental workings of an active device with novel architectures. The analyses supported by TCAD computation led to generation of knowledge establishing device-specific contrast analysis, doping dependence of the detection signal, classification of defects according to their atom core structures and trap densities and identification of dislocations as leakage paths. The project has achieved most of its objectives, milestones, and deliverables within the planned period with relatively minor deviations
Data: CORDIS, © European Union
Project objective
UNOGAN aims at developing a fundamental approach for quantitative assessment of polarization-induced 2D carriers (and their type) or junctions at the interface(s) and focuses on unraveling chemical and electronic properties of critical regions, for e.g., recessed surfaces of the gate, which is expected to shed a deeper insight into one of the severe challenges GaN industry is facing. Though successfully applied in narrow-bandgap semiconductors like Si, this SPM based approach currently face challenges of highly resistive wide band gap (Al,Ga)N. In the project, not only identification of the key issues but major improvements and even key instrumental development of E-SPM is proposed for such a rigid system, from which a correlated-analysis of spatially resolved local potential, charge and resistance in combination with computational methodology could be developed. This approach will lead to major advancements in the improvement of III-nitride based high electron mobility transistors (HEMTs) program of IMEC. Over the years, the applicant has gained significant experience in the electrical study of III-nitride materials through scanning probe, defect sensitive spectroscopies and transmission electron microscopies. UNOGAN research will channel this knowledge towards new horizons at the forefront of materials science, building a strong collaboration network involving well-established European laboratories and companies which are leaders in the field. The new skills acquired during the two-year project will serve him to boost his research career, gain independence and place the host institution as an international reference in nanoscale device characterization.
Original text from CORDIS.
Participants
- INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM · LeuvenCoordinatorBelgium
Links
Data: CORDIS, © European Union