SPOTTED · Spin Polarized Transport in Transfer Doped Diamond Wafers
Horizon Europe — Marie Skłodowska-Curie Actions
- Duration
- 2023-06-01 → 2025-05-31
- EU contribution
- €189,687
- Participants
- 1
- Scheme
- HORIZON-TMA-MSCA-PF-EF
Lines connect the coordinator with its partners.
Results in brief
Spin Polarized Transport in Transfer Doped Diamond Wafers
Due to advancements in techniques for growing high-purity, single-crystal synthetic diamonds and their unique physiochemical properties, including an ultra-wide bandgap of 5.47 eV, diamonds are now being considered as the next-generation material for a wide range of applications, including high-power, high-temperature, and high-frequency electronics, quantum computing, sensing, and communication. Given the temperature-independent conductivity and the potential to generate high hole carrier concentrations and spin-orbit coupling (SOC) through electron acceptors, it is essential to conduct a systematic investigation into the possibilities of spin-polarized transport in a 2D hole gas (2DHG) formed on transfer-doped hydrogen-terminated diamond surfaces. In our project, we aim to assess the strength of SOC in transfer-doped diamond through magnetotransport and ferromagnetic resonance studies. We also plan to explore the feasibility of spin injection and spin-polarized transport through Hanle measurements and the Rashba-Edelstein Effect. Additionally, we intend to introduce 2D-hBN between the transfer dopants and the diamond surfaces to minimize carrier scattering caused by electron acceptors in close proximity to the 2DHG, which could lead to spin depolarization. Furthermore, to gain insights into the spin asymmetry of the 2DHG during the scattering process, we propose characterizing the samples using time-domain THz spectroscopy at various scattering timescales. These studies are expected to drive extensive research in the future, and the realization of spin-polarized transport in diamond wafers offers a robust materials system for spintronics devices, enabling the development of faster and more efficient microelectronic devices that can operate even in extreme environments.
Data: CORDIS, © European Union
Project objective
With the advancement of techniques to grow high-purity, single-crystal synthetic diamonds and due to extreme physio-chemical characteristics and ultra-wide bandgap (5.47 eV) nature, diamond has been considered the next-generation material for high power, high temperature and high-frequency electronics, quantum computing, sensing, and communication applications. Observing the temperature-independent conductivity and the possibility of generating excessive hole carrier concentrations and spin-orbit coupling (SOC) generated by electron acceptors, a systematic investigation on the prospects of spin-polarized transport in 2D hole gas (2DHG) formed at transfer doped hydrogen-terminated diamond surfaces is vital. Spotted will investigate the strength of spin-orbit coupling(SOC) in transfer doped diamond via magnetotransport studies and study the possibility of spin injection and spin-polarized transport through Hanle measurements and Rashba-Edelstein Effect, respectively. We will also attempt to reduce the carrier scattering due to electron acceptors immediate to the 2DHG that may cause spin-depolarization by applying 2D-hBN between the transfer dopants and the diamond surfaces. Besides, using time-domain THz spectroscopy, the spin-dependent density and momentum scattering time of charge carriers (2DHG) will be unraveled (with and without 2D h-BN) to shed light on the spin asymmetry of 2DHG during the scattering process. These studies are expected to raise a lot of research in the future, and the realization of spin-polarized transport in diamond wafers offers a robust materials system for spintronics devices and enables faster yet efficient microelectronic devices that are operable even in extreme environments.
Original text from CORDIS.
Participants
- JOHANNES GUTENBERG-UNIVERSITAT MAINZ · MainzCoordinatorGermany
Links
Data: CORDIS, © European Union