MODERN · Multiferroic Oxide 2DEgs for Reconfigurable nonvolatile memory Nanodevices (MODERN)

Multiferroic Oxide 2DEgs for Reconfigurable nonvolatile memory Nanodevices (MODERN)

The main idea of Multiferroic Oxide 2DEgs for Reconfigurable nonvolatile memory Nanodevices (MODERN) project is the realization of novel Ferroelectric (FE) and multiferroic oxide two-dimensional electron gases (2DEGs) characterized by a metal-insulating transition as a function of the FE-polarization direction. By locally switching-on and off the 2DEG using a scanning probe, devices with arbitrary nanoscale geometry will be demonstrated and sketched in a non-volatile manner, to realize prototype FE field effect transistors (FET), spin-FET and spin-charge conversion circuits for the generation and detection of spin-currents, all operating at ultra-low power energy density. To achieve the above objectives, two heterostructures platform will be studied and realized: 1. K0.5Na0.5NbO3 (KNN)/KTaO3 2DEG, where KNN is a well-known lead-free FE layer and KTaO3 is an oxide characterized by a large spin-orbit coupling (up to 0.4 eV), that develops an interfacial 2DEG. Here KNN can both act as FE-layer with large polarization (up to 30 μC/cm2) and as interfacial donor of carriers by Nb-doping at the interface. 2. Delta-doped LAO/SrVO3 (down to 2 unit cells (UCs))/SrTiO3. Here, two UCs of VO2-terminated SrVO3 have been theoretically predicted to become a 2D multiferroic, with in plane FE order and an antiferromagnetic magnetic order. The current project has enriched of understanding the physical control mechanisms like interface engineering, spin-orbit coupling (SOC) etc. Furthermore, the project directly supports to establish 2D oxide materials as an important promising candidate for quantum oxide electronics. 2DEG-oxides could become an important brick in future electronics and Europe is in a position to retain its leadership in this field. For this purpose, the MODERN project will empower the EU investments in high-level education of high skilled, young researchers working in the oxide electronics, so that this expertise will become more appealing to the market and help to generate new kind of technological job-profiles. At the end of the project, we could realize the prototype FE field effect transistors (FET) for low power, faster read/write and high endurance non-volatile memory nanodevices.

Data: CORDIS, © European Union