Analysis of the electronic structure and of the optical properties of doped higher and endohedral fullerenes by high energy spectroscopy
FP4 — Training and Mobility of Researchers
- Duration
- 1996-03-01 → 1998-02-28
- EU contribution
- —
- Participants
- 2
- Scheme
- RGI
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Project objective
The electronic and optical properties of pristine and alkali or alkaline earth metal doped higher fullerenes Cn with n>=76 and of pristine and doped endohedral compounds A@Cn with A=Sc, Y, La, Ca, Gd, Ho ions or rare gas will be analysed by high energy spectroscopy. Photoemission (PES), x-ray absorption spectroscopy (XAS), and electron-energy-loss spectroscopy (EELS) will be applied to measure the density of states (DOS) of the occupied bands, the density of the unoccupied states, and the optical excitations. This allows to distinguish between metallic and semiconducting samples by checking the position of the Fermi level and to get information about the stochiometry and structure of the samples. The measured electronic and optical properties will be used as a test for the predictions of theoretical band structure models using local density approximations, or predictions of models which include correlation effects and electron-phonon coupling.
Original text from CORDIS.
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