The effect of high magnetic fields on the electronic behaviour of low dimensional devices
FP4 — Training and Mobility of Researchers
- Duration
- 1996-04-19 → 1997-04-18
- EU contribution
- —
- Participants
- 2
- Scheme
- RGI
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Project objective
Electrical and thermal transport properties of semiconductor low dimensional struc- tures based on III-V compounds will be studied. The project focuses on the theoretical study of these materials in the situation of high magnetic fields and large electron con- centrations. The magnetoresistivity, magnetothermopower and thermal conductivity will be determined. Using analytical approaches and numerical techniques theoretical models will be con- structed to describe the transport of charge carriers through nanostructures at high mag- netic fields. Many body effects like screening will be addressed as well as parallel conduc- tion and real-space charge transfer. The emphasis will be on the two-dimensional electron gas in high density GaAs/AlGaAS heterostructures, d-layers and quantum wells. This project will be carried out in close collaboration with experimentalists from differ- ent laboratories such as of the University of Crete (Greece), University of Athens (Greece) and KUL (Leuven, Belgium).
Original text from CORDIS.
Participants
Links
Data: CORDIS, © European Union
