Preparation and investigation of quasicrystalline thin films for use in multilayer junctions
FP4 — Training and Mobility of Researchers
- Duration
- 1996-07-01 → 1998-06-30
- EU contribution
- —
- Participants
- 2
- Scheme
- RGI
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Project objective
Quasicrystalline thin films of the icosahedral AlCuFe and AlPdRe families will be prepared in high vacuum by e-beam evaporation and sputtering. The influence of different substrates and different deposition conditions will be studied to optimize the quality of the films, which has to be checked by grazing incidence X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray microprobe, and resistivity measurements. The availability of highly homogeneous films and the precise control of the deposition parameters will also offer the possibility of producing multilayer structures containing quasicrystalline films. Experimental set-ups for tunnel spectroscopy will be developed to perform l-V measurements at low temperatures with such multilayer structures and with point contacts on simple quasicrystalline thin films. These investigations will allow to study key properties in the electronic structure of the quasicrystals and the metal-insulator transition particularly expected for AlPdRe.
Original text from CORDIS.
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Data: CORDIS, © European Union