Characterization and modeling of thin-film and ultrathin-film double gatesoi mos transistors
FP4 — Training and Mobility of Researchers
- Duration
- 1998-09-18 → 1999-09-17
- EU contribution
- —
- Participants
- 2
- Scheme
- RGI
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Project objective
Research objectives and content The research objectives is the development of CAD-compatible models for ultrathin double-gate SOI MOSFETs, valid from moderately thin devices to SOI quantum wires. The work will include models for current and charges (as well for all the large- and small-signal parameters), and the Flicker and thermal noise, and the extension of these models to harsh environments (high temperatures and radiative environments) and the implementation of these models in circuit simulators. An important part of the work will be the study and modeling of the quantum effects that are dominant below a critical silicon film thickness. The models will be checked by comparison with device measurements at different bias, radiation, temperature and frequency conditions. The work will also include the development of suitable parameter extraction techniques and the study of the sensibility of model parameter to bias, temperature and other conditions. The models integrated in circuit simulators will be validated by comparison with measurements from different circuits. Training content (objective, benefit and expected impact) The training objectives of the project are to enhance applicant's knowledge in physics, modeling and fabrication of semiconductor devices (in particular ultrathin double-gate SOI MOSFETs) and to increase his experience in design and testing of submicron SOI CMOS circuits. Links with industry / industrial relevance (22) The project is of great interest for industry. Thin-film SOI MOSFETs are becoming essential devices in many industrial applications, and in particular ultrathin double-gate SOI MOSFETs have a big potential for ULSI circuits. The study and modeling of ultrathin SOI MOSFETs will allow to develop novel devices and technologies and to design new analog and digital circuits for a broad range of applications.
Original text from CORDIS.
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Data: CORDIS, © European Union