DIAMONDSIMS · NANO-SCALE ACCURACY ANALYSIS OF DIAMOND FILMS FOR ADVANCED TECHNOLOGIES USING ULTRA LOW ENERGY SECONDARY ION MASS SPECTROMETRY AND OTHER TECHNIQUES.

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Project objective

Due to its remarkable properties, diamond has a huge potential as the basis of several new technologies. Its effective development will depend on the ability to tailor its chemistry and structure on tenant-scale. This project's objective is to form a basis for the measurement of doping and impurity profiles in diamond, accurate on the Nan scale, via ultra low energy SIMS (dualisms).The project will start with a basic study of ion beam-surface interactions for diamond. In parallel, reference materials will be designed and produced. The next step is to quantify ion beam broadening effects, very important if sharp patterns are to be measured. Next, the limits of shallow profiling due to the transient behaviour will be determined. Finally, the developed methodology will be used in applications measurements. Fulfilment of the objectives will help the development of a wide range of technologies, especially electronic devices where control of the doping profile is in its infancy. Regarding the training objectives, the applicant will receive full training in the use of state of the art use-SMS instrumentation. She will gain a deep knowledge in a key material for the development of new technology. Moreover, the researcher will become familiar with a wide range of analytical techniques in support of the central SIMS analysis.

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Participants

• UNIVERSITY OF WARWICK · COVENTRYCoordinatorUnited Kingdom

Links

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