PARSEM · Interfacial Phenomena at Atomic Resolution and Multiscale Properties of Novel III-V Semiconductors

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Project objective

The ultimate goal of this project is to provide a profound knowledge on III-V semiconductor heterostructures-nanostructures. The project will lead to extensive comprehension of growth mechanisms, microstructures and interfacial phenomena, as well as of the interrelation of structural and physical properties in order to control the atomic level the synthesis, the growth, processing and properties of novel III-V semiconductors such as III-nitrideternary and quaternary alloys, InN, and â-dilute nitrideâ- alloys. Such materials are extremely promising for the realization of devices for optoelectronic applications in UV to near IR wavelengths (e.g. light emittingdiodes, laser diodes, UV detectors), and high temperature, high frequency and power electronics like highelectron mobility transistors.In particular, quantum confinement of carriers in quantum wells and dots is anticipated to yield high performance for example by increasing the radiation efficiency of optoelectronic devices. The collaboration in this network of leading European experts in fields ranging from reactor design to electronic properties will revolutionize research in the field. An important objective is a contribution to the advancement and defragmentation of competitive European research in materials science and technology for device applications.The consortium combines the innovative multi-scale theoretical analysis of structures and properties with experimental characterisation by a unique collection of state-of-the-art techniques. The most important outcome from this multidisciplinary research effort is that a number of young researchers will be trained under expert supervision. Through mobility among the partners and a series of activities such as workshops and e-learning, they will become capable to employ a unique combination of growth, experimental characterization and theoretical modelling techniques.

Original text from CORDIS.

Participants

• Aristotle University of Thessaloniki · ThessalonikiCoordinatorGreece
• Centre National de la Recherche Scientifique (CNRS) · PARISFrance
• ECOLE NATIONALE SUPERIEURE D'INGENIEURS DE CAEN ET CENTRE DE RECHERCHE · CAENCity levelFrance
• FORSCHUNGSVERBUND BERLIN E.V. · BERLINGermany
• FOUNDATION FOR RESEARCH AND TECHNOLOGY - HELLAS · HERAKLIONCity levelGreece
• FRIEDRICH-ALEXANDER-UNIVERSITAAT ERLANGEN-NARNBERG · ERLANGENCity levelGermany
• Humboldt-Universität zu Berlin · BerlinGermany
• INFINEON TECHNOLOGIES AG · MUENCHENGermany
• INSTYTUT PODSTAWOWYCH PROBLEMOW TECHNIKI POLSKA AKADEMIA NAUK · WARSAWCity levelPoland
• QIMONDA DRESDEN GMBH & CO.OHG · DRESDENCity levelGermany
• THE UNIVERSITY OF LIVERPOOL · LIVERPOOLUnited Kingdom
• THOMAS SWAN SCIENTIFIC EQUIPMENT LIMITED · CAMBRIDGECity levelUnited Kingdom
• UNIVERSITAAT PADERBORN · PADERBORNCity levelGermany
• UNIVERSITÉ BLAISE PASCAL CLERMONT-FERRAND II · CLERMONT-FERRANDFrance
• University of Cambridge · CambridgeUnited Kingdom

Links

• View on CORDIS