NANOWIRES · One-Dimensional Wide-Bandgap Semiconductor Nanostructures: Analysis and Applications

One-Dimensional Wide-Bandgap Semiconductor Nanostructures: Analysis and Applications

The main goal of this research proposal has been to investigate one-dimensional silicon carbide (SiC) and aluminum nitride (AlN) wide-bandgap semiconductor nanostructures and develop new applications of these nanostructures for energy generation, optoelectronic, and sensing applications. The ultimate objective of this research has been to exploit superior properties of AlN and SiC nanostructures and develop new applications of these nanostructures to improve many aspects of human life. The specific research objectives include: (1) Characterization of AlN nanostructures; (2) Development of AlN nanostructure based devices for electronic and optical applications and energy generation; (3) Characterization of SiC nanowires; (4) Fabrication of SiC-nanowire based field effect transistors (FETs) for studying the electrical and optical properties of the SiC nanowires. Both of these materials are very important optical and electronic materials. Specific objectives of the project have successfully been accomplished. Structural, electrical, and optical characterization of the AlN nanostructures have been conducted. Specifically, Raman spectroscopy of the catalyst-free grown AlN nanowires has revealed very good crystal quality. Catalyst-free growth eliminates catalyst contamination and produces high quality and density of long nanowires, which is very valuable for scale-up manufacturing opportunities of these AlN nanostructures. Furthermore, photoconductivity studies of the AlN nanowires have been studied; and significant positive photocurrent responses have been measured under different photon energy excitations. These studies provide crucial information and insights for the development of AlN nanowire based UV optoelectronic devices and light sensors. Additionally, SiC-nanowire based field effect transistors (FETs) have successfully been fabricated for studying the electrical and optical properties of the SiC nanowires. The studies suggest that SiCFET devices can be great candidates as high temperature and optical sensors due to their fast repsonse and ability to function at high temperatures compared to conventional semiconductors. Full spectrum characterization of SiC nanowires has progressed quite well. The PI has demonsteated very fast response of the SiC nanowire based photosensor devices. A graduate thesis work about analysis of the SiC nanowires supervised by the PI has been completed. Additionally, two more thesis work are in progress. The CIG support has been very vital for the career development of the PI, particularly for the demonstration of the important and necessary components towards PI’s promotion to professor rank.

Текст от CORDIS, на английски · Данни: CORDIS, © Европейски съюз