H2020Индивидуална стипендия2015–2017

NANOLASER · Dynamics of semiconductor nanoscale lasers

„Хоризонт 2020“ — Действия „Мария Склодовска-Кюри“

Период: 2015-04-01 → 2017-03-31
Финансиране от ЕС: 165 599 €
Участници: 1
Схема: MSCA-IF-EF-ST

Линиите свързват координатора с партньорите.

Накратко на български

Наноразмерни светодиоди и лазери от полупроводници се анализират чрез създаване на микроскопични стълбове върху силициеви чипове. Те ще помогнат за създаването на по-бързи и енергоспестяващи оптични връзки за пренос на данни.

Този кратък обзор е генериран от изкуствен интелект

Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.

Резултати накратко

Dynamics of semiconductor nanoscale lasers

Electronic data connections are increasingly becoming a bottleneck in the exponential growth of data traffic worldwide. Future optical interconnects are the obvious successors but will require ultrasmall light sources with sub-micrometer sizes to achieve low energy consumption and ultrafast speeds. In both nanoscale light-emitting diodes (LEDs) and lasers radiative and nonradiative recombination rates play a key role in the efficiency. Specifically, radiative recombination (both spontaneous and stimulated) is affected by the small mode volume in nanoLEDs and nanolasers, potentially leading to strong Purcell enhancements and higher speed. On the other hand, nonradiative recombination rates are also very high due to the high surface-to-volume ratios, typically leading to low radiative efficiencies. In this project, using advanced nanofabrication, characterization and modelling methods, we have investigated novel nanoscale light sources consisting of a waveguide-coupled metal-dielectric cavity nanopillar LED on silicon. These devices work at telecommunications wavelengths featuring more than 20 nW waveguide-coupled powers and GHz-range modulation bandwidths at room-temperature (RT). The efficiency of the reported nanoLEDs currently lies between 0.01 and 1 percent, at RT and at 10 K, respectively, mostly limited by nonradiative recombination effects. We have developed a passivation method using sulfur treatment, followed by silicon oxide capping deposited by plasma-enhanced chemical vapor deposition,that strongly suppresses the surface recombination at the InGaAs surfaces of nanopillars from a few hundred picoseconds to more than 20 nanoseconds. These results will ensure substantial improvements in the efficiency of future nanoLEDs and reduce the threshold current in nanolasers, which are of crucial importance for their application in optical interconnects. The performance of the experimental nanoLEDs was analyzed using a rate equations model which properly takes into account the nanocavity effects in the spontaneous emission rate and the spatial and spectral overlap between carriers and photons. The model was extended to describe the stimulate emission processes occurring in nanolasers. Using this model, the ultimate limits of scaling down these nanoscale lasers and LEDs leading to Purcell enhancement of the emission and higher speeds was theoretically analyzed.

Текст от CORDIS, на английски · Данни: CORDIS, © Европейски съюз

Цел на проекта

Reducing the energy consumption and increasing the density of interconnects have been identified as one of the major challenges in the development of future computing and communication systems. Optics is the only solution for solving this interconnect bottleneck, and the development of miniaturized, efficient, and fast optical sources is therefore of paramount importance. This project addresses these challenges aiming at the theoretical and experimental investigation of the high-speed dynamics of semiconductor lasers at an unconventional scale with the goal of determining their performance and ultimate physical limits for applications in ultra-fast communications, information processing, and on-chip optical interconnects. We target a novel generation of low-threshold electrically-injected metallic cavity semiconductor nanoscale laser (NANOLASER) sources for energy efficient and ultra-fast operation at the 1.55 µm fiber-optic communication window.In these nanophotonic components photons and carriers are both confined in a sub-wavelength cavity and close to the quantum level, with dimensions ranging from hundreds to tens of nanometers and, presenting fascinating new physical phenomena, unique to electromagnetic cavities. Using advanced nanofabrication, characterisation and modelling methods, we aim at fully understanding the the dynamical properties of nanolasers and building predictive dynamical physical models. We will explore their potential for low current operation, ultra-fast modulation and large scale integration. Additionally, a number of optoelectronic and optical injection mechanisms will be investigated for applications in on-off switching and all-optical communications signal buffering. This will have a strong impact on a broad spectrum of scientific fields, namely materials science, laser science, optoelectronics, optical physics, nanophotonics, nonlinear dynamics, and computer science.

Оригинален текст от CORDIS (на английски).

Участници

TECHNISCHE UNIVERSITEIT EINDHOVEN · EindhovenКоординаторНидерландия