Pro-Oxides · Properties of metal oxides for electronic and optoelectronic devices
„Хоризонт 2020“ — Действия „Мария Склодовска-Кюри“
- Период
- 2015-04-01 → 2017-03-31
- Финансиране от ЕС
- 170 509 €
- Участници
- 1
- Схема
- MSCA-IF-EF-ST
Линиите свързват координатора с партньорите.
Накратко на български
Металните оксиди в тънки слоеве, използвани в слънчеви панели и транзистори, се изследват при различни методи на производство. Това помага да се разбере как промяната в технологията влияе върху електронните им свойства и да се намалят разходите за производство.
Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.
Резултати накратко
Properties of metal oxides for electronic and optoelectronic devices
Metal oxides are an essential building block of thin film electronics (a multi-billion dollar industry) and are incorporated in a range of commercially successful applications including photovoltaics, transparent transistors, random access memory and many more. Since the operation of thin film devices is dictated by the band alignment of the constituent layers, the strength of metal oxides is the diversity in the optoelectronic properties. The work function for an oxide can even be tuned due to the sensitivity of metal oxide properties to oxygen stoichiometry, while other band energetics can be modulated through cation doping. This sensitivity to stoichiometry is unique and offers unrealised opportunities for accurate energy level alignment with oxides but also makes electronic properties of oxides strongly dependent upon fabrication methods and parameters. The growth of the thin film electronics industry depends on its ability to compete with already established silicon-based electronics, it is, therefore, necessary to improve the economic viability of this technology. To this end, there is a growing demand for a shift from expensive vacuum based to a low-cost solution based fabrication process which is expected to lower the cost by about 64%. [J. Phys. D: Appl. Phys., (2016) 49, 433001] Unfortunately, at this stage there is no clear understanding of how adopting new fabrication methods will affect the electronic properties of oxides, although recently Chen et al. [J. Mater. Chem., (2012) 22, 24202-24212] highlighted that for a few specific oxides the work function of air-exposed and solution processed films are 0.5-1.6 eV lower than vacuum deposited films. The objective of the present proposal is to address the ambiguity in metal oxide properties and to establish principles for energy-level alignment between metal oxide layers. The specific goals of this project are to: • Perform comprehensive electrical, optical, structural and chemical characterisations of a collection of metal oxide compounds each with a controlled variation in the chemical composition • Correlate the electronic and optical properties of compounds to the stoichiometry • Provide insight into the energy-level alignment at metal oxide/metal oxide interfaces
Текст от CORDIS, на английски · Данни: CORDIS, © Европейски съюз
Цел на проекта
Metal oxides are a versatile group of semiconductors that are employed in a broad range of applications including micro/nano-electronics, photocatalysis and thin-film devices. The strength of metal oxides for these contemporary applications resides in the diversity of the electronic and optical properties which determine energy-level alignment and consequently dictate device performance. Furthermore, metal oxides exhibit a sensitivity to stoichiometry, unique among semiconductors, that permits fine-tuning of these properties. This feature offers an elegant yet simple method for additional performance optimisation. However, it requires a deep understanding of the relationship between the stoichiometry of metal oxide compounds and the aforementioned properties that is currently lacking. In this proposal we will fabricate metal oxides with a spatial gradient in chemical composition and characterise the optical, electrical and chemical properties with high-throughput scanner, at an unparalleled rate. From these results we will establish the correlation between these properties and the exact chemical composition for a multitude of compounds. In addition, a model to describe the alignment of energy-levels across metal oxide/metal oxides interfaces will be developed. The present proposal will address the disparity of reported information for metal oxide properties arising from poor chemical analysis and greatly advance the engineering capabilities of thin-film technologies. The research described here is designed to integrate seamlessly and strongly support the All Metal-Oxide Photovoltaic project under the Seven Framework Programme.
Оригинален текст от CORDIS (на английски).
Участници
- BAR ILAN UNIVERSITY · Ramat GanКоординаторИзраел
Връзки
Данни: CORDIS, © Европейски съюз