H2020Индивидуална стипендия2016–2019

PHONON-VALVE · Designing Novel Phonon Valve Device through Ferroic Domain Wall Engineering

„Хоризонт 2020“ — Действия „Мария Склодовска-Кюри“

Период
2016-09-26 → 2019-09-25
Финансиране от ЕС
239 191 €
Участници
2
Схема
MSCA-IF-GF

Линиите свързват координатора с партньорите.

Накратко на български

Фероелектричните материали се изследват за създаване на „фононен вентил“, който с помощта на електрическо поле да пуска или спира топлинния поток. Това помага за разработването на устройства, които могат активно и обратимо да контролират преноса на топлина в твърдите тела.

Този кратък обзор е генериран от изкуствен интелект

Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.

Резултати накратко

Designing Novel Phonon Valve Device through Ferroic Domain Wall Engineering

In this project we address the possibility of creating a conceptually new device that aims at controlling the heat transport. The mechanism would be similar to a switch for heat propagation: enabling (state ON) or inhibiting (state OFF) the heat from flowing along a given path. We call this device a “phonon valve” as phonons, quasiparticles accounting for the mechanical vibrations in solids, are the main heat carriers in insulating crystalline solids. Thus, if phonons are blocked or scattered somehow, heat would not flow. Then, the idea is to design a “phonon barrier” that can be opened or closed at will by using an applied electric field. For a practical and realizable device, the activated and deactivated states should be reversible (you should be able to open the valve again when you have closed it and vice versa) and robust (the effect of opening and closing the valve should last). Hence, the problem is reduced to design the most appropriate material to meet the requirements of active phonon barrier. Ferroelectric materials naturally form internal and distinctive regions, called ferroelectric domains, each of them characterized by the polarization. The borders between these domains, domain walls, are intrinsic interfaces within the material. These interfaces may be effective centres of phonon scattering, so they would accomplish the first requirement for the phonon valve: the existence of a barrier of phonons. Second requirement is the possibility of opening and closing the phonon valve, which is also expected to be met in these materials: an electric field is able to erase and create domain walls. Third requirement is to be reversible and robust. This criterion is also expected to be fulfilled as the domain walls are stable once the electric field is removed and the process of creation/destruction of domain walls is reversible for a large number of cycles. Because of all these reasons ferroelectrics are excellent candidates for this job. Regarding the benefits for society it is worth observing that many of the major technological breakthroughs occurring in the last few decades rely on our great capability to manipulate two elementary particles: electrons and photons. Both of them are the basis of present-day electronics, photonics and semiconductor industry in general, including all electronic media (TV, computers, smartphones, etc), wire and wireless communications, energy harvesting, magnetic data storage, etc. If we manage to achieve a similar degree of control over phonons, we could start developing a completely new technology: the so-called “phononics”. This new technology may open a new way of communication or create new data storage devices and computers based on phonons. Additionally, as manipulating phonons entails manipulating the heat flow it could lead to control the thermal energy at will, propelling new possibilities for energy management, including storage and harvesting.

Текст от CORDIS, на английски · Данни: CORDIS, © Европейски съюз

Цел на проекта

Much of the major technological breakthroughs occurring in the last few decades rely on our enhanced capability to control and manipulate two particles: electrons (both charge and spin) and photons. Achieving a similar degree of control over phonons would be extraordinarily valuable as we will be able to channel thermal energy at will –thus propelling new possibilities for energy management– as well as the development of a completely novel technology for logic, data storage devices and computing mechanisms based on phonons.The goal of this proposal is to design a conceptually new device: a phonon valve, a nanostructured system to control phonon transport at will by an external field. To carry out this idea we propose to use ferroelectric oxide materials as valves, in particular engineering suitable configurations of ferroelectric-ferroelastic domain walls in multilayer nanostructures. If successful, the realization of this project would represent a major qualitative leap forward in an emerging new technology: “Phononics”. Moreover, it will contribute to progress in the field of physics and properties of ferroic domain walls.

Оригинален текст от CORDIS (на английски).

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Данни: CORDIS, © Европейски съюз