H2020Индивидуална стипендия2016–2018

USEMITE · Ultimate growth characterization for development of new semiconductor technologies

„Хоризонт 2020“ — Действия „Мария Склодовска-Кюри“

Период: 2016-09-01 → 2018-10-31
Финансиране от ЕС: 183 455 €
Участници: 1
Схема: MSCA-IF

Линиите свързват координатора с партньорите.

Накратко на български

Полупроводниковите материали, използвани в светодиоди и лазери, се изследват чрез наблюдение на техния растеж в реално време с висока разделителна способност. Това помага за по-доброто разбиране на процесите при създаването на електронни компоненти и разработването на по-евтини наноструктури.

Този кратък обзор е генериран от изкуствен интелект

Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.

Резултати накратко

Ultimate growth characterization for development of new semiconductor technologies

Semiconductors are a fundamental part of current electronics. We find semiconductor components in phones, cars, telecommunication devices, screens, etc. Semiconductor devices such as LEDs or lasers are grown epitaxially in Molecular Beam Epitaxy (MBE) systems. Despite how widely used these materials are, growth dynamics are not understood due to the lack of techniques that allow us to directly observe the surface during growth with high resolution. Material characterization is usually done after growth, either ex-situ or in-situ. This requires lowering the temperature and exposing the sample’s surface to a different atmosphere, changing the sample under study. During USEMITE project we have developed a unique technique that enables us to observe epitaxial processes in real time with 5 nm resolution in x/y plane and atomic resolution on z-plane. The work carried out during this project has enabled us to increase the functionality of the system and study nucleation mechanisms in complex samples. We have also designed and built an Aluminium anodization system that allow us to create oxide membranes with nanometric pores, which can be used to fabricate nanostructures in larger areas more cheaply. USEMITE project has allowed us to extend the state of the art on epitaxial growth and nucleation, enable us to collaborate and transfer our new knowledge to colleagues and industrial partners, and facilitated future research by enabling us to develop a unique research instrument.

Текст от CORDIS, на английски · Данни: CORDIS, © Европейски съюз

Цел на проекта

The integration of III-As structures with Silicon is of major importance to industry. Currently nanostructures are already being applied to information and communication technologies and their integration with Silicon electronics is being developed. Current fabrication techniques allow patterning of nanostructures from bulk layers but modify the properties of the materials by introducing defects. The ability to control nucleation and growth of self-assembled quantum nanostructures will propel the development of electronics and photonics. The combination of in-situ Low Energy Electron Microscopy (LEEM) during Molecular Beam Epitaxy (MBE) offers the possibility to directly observe the growth on real-time in real and reciprocal space. Therefore, to observe the nucleation dynamics, the lattice structure dynamics, surface dynamics, etc. The level of control that LEEM can provide to MBE is unheard of and unique.The goals of the MSCA project are: • Elevate current III-V LEEM system to enable direct interaction with MBE facilities, both research and industry based, across Europe.• Apply the technique to the fabrication of site-controlled nanostructures.• Transfer the growth conditions found during direct observations of the growth by MBE-LEEM to industrial fabrication of quantum devices.During the MSCA period, the LEEM-MBE will be used to study the nucleation of GaAs on Si, the nucleation of InAs QDs on GaAs, nucleation of InAs QDs on complex structures to induce site control nucleation using strain field, nucleation and growth of nanowires (NWs) using catalysts and self assembled. Additionally an aluminium anodization system will be fabricated and installed in order to deposit the catalyst in a hexagonal lattice along the area of the whole substrate. The latter project will be carried out by a PhD student which will be funded by Cardiff University.

Оригинален текст от CORDIS (на английски).

Участници

CARDIFF UNIVERSITY · CARDIFFКоординаторОбединеното кралство