MuStMAM · Multi State Memory in Artificial Multiferroics
„Хоризонт 2020“ — Действия „Мария Склодовска-Кюри“
- Период
- 2018-03-01 → 2020-03-13
- Финансиране от ЕС
- 195 455 €
- Участници
- 1
- Схема
- MSCA-IF-EF-ST
Линиите свързват координатора с партньорите.
Накратко на български
Мултифероичните материали се изследват за създаване на компютърна памет с множество състояния в една клетка. Това помага за увеличаване на капацитета за съхранение на данни и намаляване на огромния разход от електроенергия в центровете за данни.
Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.
Резултати накратко
Multi State Memory in Artificial Multiferroics
In this project, the present challenge to increase the areal density of computer memory storage was addressed by multiferroic tunnel junction (MFTJ) based multi-state memory device. The fellow was able to create a heterostructure with possible multi-state switching originating from magnetic switching, ferroelectric switching, and exchange bias switching at the same memory cell. The fellow also investigated the possibility of room temperature ferromagnetic multiferroic material by vertically aligned nanocomposite film for next-generation multistate memory and electric control of magnetism. Electricity use by ICT could exceed ~21% (expected) to 50% (worst-case) of the global total electricity in 2030 compared to 2018. Only the data centres will use one-third of that which is more than the national energy consumption of many countries. That puts ICT’s carbon footprint to go up to almost 10 times by 2030. With the spectre of energy-hungry data-driven alarming future looming, new technology is very much essential to keep the industry’s environmental impact low while fulfilling the consumer demand for high-speed and high-density data. The results achieved in this project are very important for the society as the society is facing the mammoth challenges to create energy-efficient high-density memory. The overall objectives of this project were to understand the strongly correlated oxide materials and their nanostructures for spintronics based multi-state non-volatile memory. Spintronics is promising for device applications but complicated by materials science aspects such as growth, characterisation and materials physics which is required to be properly investigated in order to perform with low power and higher efficiency. The project addressed these as proposed.
Текст от CORDIS, на английски · Данни: CORDIS, © Европейски съюз
Цел на проекта
Our digital universe is doubling in size every two years, so that by 2020, it will contain nearly as many digital bits as there are stars in our physical universe! Existing memory technologies are approaching their physical storage limitations as miniaturisation of electronic devices continues. This requires significant development of advanced next generation data storage technologies to sustain consumer demand for increasing levels of data creation. New materials and technology to store more data in smaller area are required. There is a strong argument in favour of investing in multiferroic material that is still at a distance from a marketable position. In this proposed project we will investigate the prospect of exchange bias coupled artificial multiferroic material for high density memory device to overcome the market demand.In recent research, multiferroic tunnel junctions (MFTJ) have excited enormous interest for high-density memory devices. In this project, we propose a heterostructure of ferromagnetic (FM) and ferroelectric (FE) materials where the interface becomes antiferromagnetic layer and creates exchange bias (EB) coupling with adjacent FM layer. Due to induced EB, the system will add additional functionality giant magneto resistance (GMR) along with tunneling electro-resistance (TER) and magneto-resistance (TMR) in a single MFTJ, and allow multiple resistive states per memory element at very low dimension where multiple bits can be stored. During the proposed project magnetoelectric process in artificial multiferroic systems will be investigated to unveil possible nanoscale coupling between different ferroic parameters, magneto-electric transport processes and effect of exchange bias on them. Heterostructure thin film with high degree of quality will be studied aiming high density multistate memory device. The project will offer the opportunity to work in collaboration with other research groups both within and outside the University of Cambridge.
Оригинален текст от CORDIS (на английски).
Участници
- THE CHANCELLOR MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE · CAMBRIDGEКоординаторОбединеното кралство
Връзки
Данни: CORDIS, © Европейски съюз