H2020Индивидуална стипендия2018–2020

FERHAZ · Multiscale Investigations on Si-integrable Ferroelectric Hafnia-Zirconia Systems: From Fundamental Understanding to Everyday Electronics

„Хоризонт 2020“ — Действия „Мария Склодовска-Кюри“

Период: 2018-05-01 → 2020-04-30
Финансиране от ЕС: 165 599 €
Участници: 1
Схема: MSCA-IF-EF-ST

Линиите свързват координатора с партньорите.

Накратко на български

Фероелектричните материали на основата на хафний и цирконий се изследват за създаване на енергоспестяващи памети за електронни устройства. Те помагат за намаляване на загубите на електричество при миниатюризирането на транзисторите в домашната електроника.

Този кратък обзор е генериран от изкуствен интелект

Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.

Резултати накратко

Multiscale Investigations on Si-integrable Ferroelectric Hafnia-Zirconia Systems: From Fundamental Understanding to Everyday Electronics

"Home electronic devices contribute to an increasing part of residential electricity usage (50% by 2030 as estimated by international energy agency). The “endless” shrinkage of transistors to pack and process more information enhances these static losses. Ferroelectric materials and corresponding low-power electronic devices provide neat solutions to minimize these losses. However conventional ferroelectric materials lose their properties when miniaturized, limiting the microelectronic applications of these materials. The material systems explored in FERHAZ are Hafnia based ferroelectrics. These are Si compatible simple oxides. Ferroelectricity in these materials becomes robust at nanaoscale, quite opposite to conventional ferroelectrics. FERHAZ included thorough investigations that lead us to gain key insights into this ""new kind"" of ferroelectricity. The project began with systematic studies on the effect of strain, and size in stabilizing a novel ferroelectric phase in Hafnia-based compounds. Guidelines to stabilize this ""new kind"" of ferroelectricity were arrived at. These films were grown then epitaxially on Si, and ferroelectric properties of such capacitors were investigated. Ferroelectric tunnel junctions were explored as potential low-power memories, and the structure-property studies were carried out through state-of-the art electron microscopy. The important role of oxygen vacancies and their migration is crucial for this new kind of ferroelectricity. The conclusions from FERHAZ has the potential to inspire the design of other simple oxide ferroelectric systems."

Текст от CORDIS, на английски · Данни: CORDIS, © Европейски съюз

Цел на проекта

Everyday electronic devices suffer from power-loss issues originating from leakage currents in the stand-by (OFF) mode, which dominate even more with miniaturization of transistors. The concept of negative capacitance on ferroelectric (FE) materials, and consequently ferroelectric field-effect transistor (FEFET) provides a materials solution to achieve sharp-switching in FETs, and promises to be a breakthrough solution to reduce this OFF state leakage. The recent demonstrations of ferroelectricity in thin (<10 nm) Hafnia-based (HfO2) films, which are readily Si integrable is an encouraging news for FEFET technology. FEFETs have earlier eluded industrial applications owing to Si compatibility issues of well-known FE materials. FERHAZ tackles this new kind of ferroelectricity, starting from fundamental studies on its origin leading upto application oriented FEFET devices. In FERHAZ, HfxZr1-xO2 (HZO) films with varying Zr content (x, doping) will be grown epitaxially on various substrates (strain-states) including Silicon, under various oxygen partial pressures (point-defects). The FE hysteresis, dielectric and piezoelectric response on these films will be measured, and will be correlated with atomic structure, symmetry, microstructure and chemistry analysis obtained via high-resolution STEM and spectroscopy. The best FE films on Si will be selected to study the phase-competition, FE and piezoelectric behavior in real time under strain and electric field via in situ TEM measurements. Lessons from these fundamental multiscale studies will be employed in the fabrication and optimal design of FEFET with small leakage. FERHAZ will integrate my expertise on in situ microscopy with the extensive experience of the host-lab in FE thin-film growth and characterization. Importantly, the skills and training obtained will enable me to position myself as a leading young scientist in materials science, strengthening my career prospectives to be a future group leader.

Оригинален текст от CORDIS (на английски).

Участници

RIJKSUNIVERSITEIT GRONINGEN · GroningenКоординаторНидерландия