H2020Индивидуална стипендия2019–2020

ProTOC · Functional Electrical Contacts to Two-Dimensional Materials with Tunable Interfacial Oxides

„Хоризонт 2020“ — Действия „Мария Склодовска-Кюри“

Период: 2019-06-01 → 2020-11-30
Финансиране от ЕС: 131 105 €
Участници: 1
Схема: MSCA-IF-EF-RI

Линиите свързват координатора с партньорите.

Накратко на български

Двуизмерните материали се съчетават с метални контакти и защитни слоеве от оксиди чрез специален метод за прецизно нанасяне на атоми. Това помага за създаването на по-стабилни нано-електронни устройства без увреждане на повърхността им.

Този кратък обзор е генериран от изкуствен интелект

Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.

Резултати накратко

Functional Electrical Contacts to Two-Dimensional Materials with Tunable Interfacial Oxides

The project focused on the large-scale integration of two-dimensional (2D) van der Waals (vdW) materials with other bulk materials using remote plasma-assisted atomic layer deposition (ALD) to establish the foundation for future optoelectronics devices. 2D materials have unique properties to augment current semiconductor technology vital for future nanoelectronics. Unlike monolithic bulk materials, the weak vdW forces between the layers in 2D materials release lattice matching conditions, thus allow forming novel heterostructures of desired properties. However, making electrical contacts to 2D materials and their integration with dielectrics is challenging because it often requires harsh growth and processing conditions involving plasma, elevated temperatures, and reactive chemicals deleterious to the vdW surface and the performance of 2D devices. Thus, a major challenge for 2D device fabrication and applications is integrating them with other bulk materials without creating defects in the 2D material. The ProTOC project’s goal was to explore ultrathin nitrides and oxides, grown by ALD, as protective coatings for 2D materials, to create novel 2D/3D heterostructures, and interfacial layers to conformally contact 2D materials and prevent damages to the 2D material during metal deposition. ALD allows for precise control of the material’s thickness and composition to tune electronic properties, such as work function, dielectric constant, and defect concentrations. In conclusion, ProTOC demonstrates the damage-free deposition of dielectrics, semiconductors and metals on 2D materials on a large-scale by ALD, which is compatible with semiconductor technology. Beyond the application for 2D materials, the ALD processes developed during this project are relevant to the semiconductor industry and device engineering. Overall, the accomplishments in ALD in the context of devices will lead to further technological breakthroughs resulting in patents and consumer products beneficial for the industry, research and economy.

Текст от CORDIS, на английски · Данни: CORDIS, © Европейски съюз

Цел на проекта

Two-dimensional (2D) van der Waals (vdW) materials are promising for future nanoelectronic devices. However, their performance is often hampered by the presence of a large number of defects at metal/2D material interfaces. The project ProTOC will extend the applications of atomic layer deposition (ALD) to engineer functional electrical contacts in 2D nanoelectronic devices using interfacial transition metal oxides (TMOs) of controlled stoichiometry and electronic properties. ALD-grown TMOs, vanadium and titanium oxides, are explored as interfacial layers that are vdW-bonded to 2D material MoS2 on one side and chemically bonded to the metal electrode one the other side. ALD allows for precise control of the oxide composition in order to tune electronic properties, such as work function, dielectric constant, and defect concentrations. The electronic properties of ultrathin ALD-oxides of different compositions and their complex interactions with 2D materials, which in turn affect transport, will be investigated in a combined effort using 2D field-effect transistor (FET) transport measurements, spectroscopic methods, and scanning probe microscopy techniques. The band alignment at the contacts can be adjusted by changing the composition of the ALD-grown layers, which may provide a new route to engineering desired contact behaviour over a broad range from rectifying or low resistance ohmic, depending on the end application. This contacting scheme will be exploited to achieve both p- and n-type conductance in MoS2 FETs, which is key for logic applications and difficult to achieve with 2D materials. This project will benefit from the complimentary knowledge and experience of researcher, who is an expert in device design, fabrication, and advanced scanning probe methods, as well as host, who provides unique capabilities and expertise in materials growth by ALD and the spectroscopic characterization of complex oxide films in the context of devices.

Оригинален текст от CORDIS (на английски).

Участници

TECHNISCHE UNIVERSITAET MUENCHEN · MuenchenКоординаторГермания