H2020Индивидуална стипендия2020–2022

H-3D-SOC · 3D IC Design Flow for Hybrid-bonding 3D System on Chip

„Хоризонт 2020“ — Действия „Мария Склодовска-Кюри“

Период
2020-04-01 → 2022-03-31
Финансиране от ЕС
178 320 €
Участници
1
Схема
MSCA-IF-EF-ST

Линиите свързват координатора с партньорите.

Накратко на български

Методи за проектиране на 3D чипове с хибридно свързване се изследват за оптимизиране на многоядерни процесори. Това помага за подобряване на производителността и надеждността на системите чрез намаляване на грешките при свързването на компонентите.

Този кратък обзор е генериран от изкуствен интелект

Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.

Резултати накратко

3D IC Design Flow for Hybrid-bonding 3D System on Chip

Development of design methods & practical tools for a face-to-face and wafer by wafer hybrid bonding based H-3D-SOC is explored to optimize the performance and benefits of the 3D system for multi-core in-parallel processor application. Furthermore, to quantitatively evaluate the impact of process variation on the performance and reliability of H-3D-SOC IC, the variability and reliability models for hybrid bonding pads will first be developed and calibrated by experimental measurement such as daisy chain conducted by the IMEC 3D process group. Then, the hybrid bonding pad models will be applied to dynamically evaluate the performance of H-3D-SOC under specific testbenches and predict the 3D system time-to-failure by referring to the 2D counterpart performance. Finally, to mitigate the impact of hybrid bonding process variation on system performance and reliability, the critical pads will be efficiently identified and hardened by adding a spare hybrid bonding pad to each of the critical pad. The implementation of H-3D-SOC provided the research and technical groundwork to address a two-fold innovation goal: Design enablement of face-to-face 3D IC with nominal hybrid-bonding vertical interconnects. Hardening technique to improve variability and reliability of the H-3D-SOC. Over these 18 months of the project, H-3D-SOC has achieved most of its key research goals as well as the training and public outreach goals that have been set. In view of the early termination of the project, due to family/professional reasons of the MSCA fellow, the status of the work related to the second goal has not been completed yet due to the limit or lag of EDA tool support for this work; the fellow will commit to working on this once the EDA tool is ready. However, the fellow has updated this goal with another interesting study which is also highly related to the H-3D-SOC project: 3D optimized SRAM macro design, optimization and its application to the memory-on-logic 3D system. In order to best align the above goals of H-3D-SOC with emerging R&D challenges and needs in the semiconducting industry, the overall research plan carried out in the project was particularly adapted and focused on the following activities-objectives: 1. Propose the 3D die-by-die flow based on 3D hybrid bonding technology. The 3D hybrid bonding technology was characterized and modeled based on experimental tests. 2. Proposed 3D optimized SRAM macro by optimizing the pin locations of the macro for better 3D Place and Route PPAC (power-performance-area-cost). 3. Demonstrated 3D memory-on-logic exploration based on the proposed 3D technology and optimized 3D macro

Текст от CORDIS, на английски · Данни: CORDIS, © Европейски съюз

Цел на проекта

As the device size is shrunk to its quantum limit, Moore’s law is becoming more difficult to follow. By exploiting the z-direction in the gate, block or system level, three-dimensional (3D) integrated circuit (IC) technology has the potential to extend Moore’s law. Face-to-face wafer by wafer Hybrid-bonding (H-b) based 3D System-On-Chip (H-3D-SOC) is one of the most promising 3D IC solutions. However, an exclusive IC design flow for H-3D-SOC for high-end processor with parameters of H-b pads from process is not available yet. This proposal aims at developing the first H-3D-SOC IC design flow for a two-tier multi-core processor considering the impact of process variation of H-b, including the geometrical and defects variation, leading to its resistance and capacitance change. Several novel methods will be developed for the H-3D-SOC IC design: machine-learning inspired techniques exploited to guide the top and bottom tiers netlist partitioning; two-tier mutual-aware optimization realized during placement and routing; capacitance coupling between the top metal layers of the two tiers considered during parasitic extraction. Moreover, impact of H-b pad parameter variation will be evaluated from the device level up to the system level: electrical variability modelling for the H-b pad, calibrated by experimental data; incorporating the device model of the pad into the H-3D-SOC based multi-core processor characterized by various industrial benchmarks. To mitigate the H-b variability, the critical H-b pads of higher utilization and larger potential to fail during working can be first identified efficiently by using a heuristic search algorithm and then hardened by attaching a spare pad to each of them. The proposed research will enable the applicant to become an expert of 3D IC design of high-end processors for applications such as AI and cloud computing, having great impact on both academia and industry of semiconductor.

Оригинален текст от CORDIS (на английски).

Участници

  • INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM · LeuvenКоординаторБелгия

Връзки

Данни: CORDIS, © Европейски съюз