TECNO · Templated Electro-Chemical Synthesis for Novel devices
„Хоризонт 2020“ — Действия „Мария Склодовска-Кюри“
- Период
- 2020-11-01 → 2022-10-31
- Финансиране от ЕС
- 191 149 €
- Участници
- 1
- Схема
- MSCA-IF
Линиите свързват координатора с партньорите.
Накратко на български
Интегрирането на полупроводници от III-V групата, като индийския антимонид, върху силициева основа чрез електрохимичен метод се изследва в проекта. Това помага за създаването на по-бърза електроника и сензори, които да надминат ограниченията на сегашната силициева технология.
Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.
Резултати накратко
Templated Electro-Chemical Synthesis for Novel devices
It is predicted that the electronic product market (including devices and components) will grow from 1653.2$ billion in 2025 to 2169.6$ billion in 2030. This growth is driven by the increasing importance of electronic devices and components in our everyday life, starting from personal wireless audio and display devices and ending with highly specified futuristic applications like quantum computers. Academia and industry have recently focused on the search for alternative technologies for which performance, in the long run, could considerably surpass that of currently reaching limits silicon technology. These include compound semiconductors for sensing and high-speed electronics where high value is created. The best solution would be to combine the advantages of silicon (Si) and semiconductors made up of group-III and group-V elements. However, both economic and technological difficulties (such as high fabrication costs, multistep synthesis paths, unintentional doping, and physical property incompatibility) have prevented the integration of these foreign materials directly on a silicon platform. The ambition of TECNO was to address the problematic monolithic integration of III-V semiconductors, especially indium antimonide (InSb), directly on silicon by introducing an environmentally friendly, water-based solution based on CMOS-compatible electrodeposition.
Текст от CORDIS, на английски · Данни: CORDIS, © Европейски съюз
Цел на проекта
The overall goal of TECNO is to become an enabling technology for InSb-based devices on Si, which has numerous and wide-ranging applications, such as IR sensing, Majorana zero mode devices, and high-performance cryogenic amplifiers. For this purpose, I propose an innovative approach to template-assisted selective deposition. In the currently implemented integration technology at IBM, I will replace the semiconductor deposition process (MOCVD) by electrochemical methods. This will enable entirely new possibilities of integrating III-V semiconductors on silicon for sensing and quantum computing. TECNO will result in an solution-based technology for the preparation of high-quality multicomponent semiconductor materials and validate the proposed path by demonstrating functional electronic devices on silicon. The aim of the project is also to significantly expand my knowledge base and therefore amplify the impact of my research as well as my career prospects. TECNO ideally demonstrates the mutual overlap of typically quite separate fields, i.e. chemistry with solid state physics and device engineering. My deep expertise in electrochemistry perfectly matches the requirements of IBMs semiconductor interests and their integration technology. It is truly beneficial for both parties involved. IBM will benefit from my electrochemical solution expertise, while I will learn how to push my work to another level of maturity and impact in an industrial environment.
Оригинален текст от CORDIS (на английски).
Участници
- IBM RESEARCH GMBH · RUESCHLIKONКоординаторШвейцария
Връзки
Данни: CORDIS, © Европейски съюз