H2020Индивидуална стипендия2021–2023

ARETHA · Advances foR nExt generaTion tHz Applications

„Хоризонт 2020“ — Действия „Мария Склодовска-Кюри“

Период: 2021-05-01 → 2023-04-30
Финансиране от ЕС: 174 167 €
Участници: 1
Схема: MSCA-IF

Линиите свързват координатора с партньорите.

Накратко на български

Силовите MOSFET транзистори се оптимизират чрез нови материали за тънки слоеве и създаване на параметризирана библиотека за проектиране. Това помага за повишаване на ефективността на електрониката в телекомуникациите, центровете за данни и потребителските устройства.

Този кратък обзор е генериран от изкуствен интелект

Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.

Резултати накратко

Advances foR nExt generaTion tHz Applications

The ever-growing need for smaller, more robust, and cost-efficient power devices has led to the constant optimization of the power MOSFETs. Power semiconductor devices, or simply power devices, are usually optimized for their intended purpose. In this project the focus is on powerMOSFETs for telecom, datacom and consumer electronics applications. All of them are dedicated to markets that evolve massively with the ever-growing digitalization. For telecom and datacom this also includes the extensive need for data transfer (even more important after the effects of the Covid-19 pandemic with the need of digital communication) and the electronics applications that are needed to make the digital world accessible. Therefore, powerMOSFETs and the needed technologies to improve them is the focus of ARETHA. In a multidisciplinary way, Dr. Maria Mitronika applied novel ideas and the latest achievements in material science to study and further provide highest efficiency power MOSFETs for power management of telecom, datacom and consumer electronics. The work evolved around two main objectives with the goal to enhance Si Power MOSFET capabilities and performance. First Dr. Mitronika evaluated the possibility to create a new parametrized library for Si Power MOSFETs, as a kind of toolbox for module design to be able to provide more sophisticated products. In the second part, Dr. Mitronika investigated the feasibility to implement a novel approach for developing thin films used as Gate Oxide in trench MOSFET technologies. With these two focus topics, Dr. Mitronika worked on a holistic approach for the improvement of powerMOSFETS, using both, the materials perspective she brought in from her expertise and the semiconductor technology she could make use of at Infineon.

Текст от CORDIS, на английски · Данни: CORDIS, © Европейски съюз

Цел на проекта

The terahertz frequency band attracted strong research interest over the last few years and it is proclaimed as an ideal solution for accommodating the escalating needs of the envisioned applications in the fourth industrial revolution era. The implementation of efficient and affordable integrated hardware components and systems able to provide solid performance in this frequency range requires the solution of many technical and scientific challenges. On account of this, the main target of this proposal is to provide a holistic approach that will enhance and optimize the foundations of the development of these building blocks, starting from the underlying advanced semiconductor and IC packaging technology platforms that offer the basis for the implementation of THz IC designs. The project approach is multidisciplinary applying novel ideas and the latest achievements in material science to the engineering of custom silicon-based IC designs in the THz regime. In some cases, the researcher Dr. Mitronika intends to design new components and include them in a dedicated library to assess the IC design and in others, to evaluate, improve and propose new thin film technologies that improve the total chip performance. Accordingly, our work will deal with two major objectives based on which a complete THz hardware design platform will be proposed as a practically feasible solution. The first objective is to enhance the required process design kit with a set of scalable microwave elements, adequate for THz IC design. The second objective is to explore the implementation of microwave passive components in the IC packaging technology and propose modifications to the thin film technologies. A successful elaboration of our holistic approach will enable the THz infrastructure evolution that will affect the advancements in the next generation of communication systems (6G) but also in biomedical and sensing applications.

Оригинален текст от CORDIS (на английски).

Участници

INFINEON TECHNOLOGIES AUSTRIA AG · VillachКоординаторАвстрия