HEИндивидуална стипендия2024–2025

MaDLED · Mastering Electronic Doping in Tin-Halide Perovskites to Develop Near Infrared Light Emitting Diodes

„Хоризонт Европа“ — Действия „Мария Склодовска-Кюри“

Период: 2024-01-01 → 2025-12-31
Финансиране от ЕС: 188 590 €
Участници: 2
Схема: HORIZON-TMA-MSCA-PF-EF

Линиите свързват координатора с партньорите.

Накратко на български

Калаево-халидни перовскити се изследват, за да се контролират дефектите в тях и да се създадат по-ефективни светодиоди за близкия инфрачервен спектър. Това помага за разработването на по-евтини и екологични източници на светлина за биомедицинско изобразяване и оптични комуникации.

Този кратък обзор е генериран от изкуствен интелект

Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.

Резултати накратко

Mastering Electronic Doping in Tin-Halide Perovskites to Develop Near Infrared Light Emitting Diodes

Near-infrared light (NIR, roughly 800–1000 nm) is widely used in everyday technologies, from secure sensing and night-vision style detection to biomedical imaging and optical communications. Today’s mainstream NIR emitters often rely on high-temperature vacuum epitaxy of inorganic semiconductors, which can be costly and difficult to scale to large areas or flexible formats. Solution-processed metal-halide perovskites offer an attractive alternative because they can be deposited at low temperature from inks, while keeping excellent optoelectronic properties. However, pushing efficient emissions beyond 800 nm remain challenging. Tin-halide perovskites (THPs) are among the most promising candidates because their emission wavelength can be tuned from deep red to NIR region (670 – 1000 nm), and they enable lead-free device concepts that align with Europe’s ambition for greener electronics. The central obstacle is that THPs tend to be strongly self p-doped due to the tin redox chemistry and defects. Excessive p-doping and deep trap states promote non-radiative losses (trap-assisted recombination and Auger recombination), lowering light-emission efficiency of LEDs. The project’s overall objective was therefore to master and modulate self p-doping and defect chemistry in tin-halide perovskites, and to translate that understanding into improved NIR-LED performance and stability. This pathway to impact links fundamental photophysics (how charges recombine and where they are lost) to practical materials design and device engineering, targeting scalable NIR light sources for future sensing, health, and communication technologies.

Текст от CORDIS, на английски · Данни: CORDIS, © Европейски съюз

Цел на проекта

As a key advancing technology, near-infrared light-emitting diodes (NIR-LEDs) cover nearly all aspects of our daily life due to their supported large applications, such as biomedical imaging, optical communication, security, and data storage. With extensive efforts, the efficiencies of LEDs have been improved by over 20% in the emission range below 800 nm. However, the development of NIR-LEDs over 800 nm is modest due to the fundamental limitation of emitters. Recently, tin-halide perovskites (THPs) have emerged as one of the most promising candidates for NIR-LED application. Through easy composition engineering, the emission of THPs can be readily tuned from 680 nm to 1000 nm. Meanwhile, the low-toxic Sn-based perovskites follow the requirements of the European Green Deal, which ask for reducing pollution to enhance the protection of human life, animals, and plants. However, the excessively high p-type doping in THPs, which reduce the carrier injection efficiency and radiative recombination efficiency, currently limits the development of THP-based NIR-LEDs. This project (MaDLED) will promote the development of NIR-LEDs by developing novel strategies to increase carrier injection and recombination efficiency. The results of this project will advance the knowledge about NIR emissive semiconductors, and be of value in other fields, such as solar cells, detects, transistors, etc. This will be achieved by integrating deep knowledge of materials science with expertise in advanced optical-electronic spectroscopies in the host (Istituto Italiano di Tecnologia, Italy). Besides, a secondment (Helio Display Materials, United Kingdom) is planned to define a suitable route to industrialization. After training in this project, I will have an increased set of research and transferable skills and competencies, which is critical to enhancing my employability and career prospects.

Оригинален текст от CORDIS (на английски).

Участници

FONDAZIONE ISTITUTO ITALIANO DI TECNOLOGIA · GenovaКоординаторИталия
HELIO DISPLAY MATERIALS LIMITED · OXFORDОбединеното кралство