HEИндивидуална стипендия2023–2026

2DTWIST · Electrostatic actuation of 2D-materials-based heterostructures for in situ twistronics

„Хоризонт Европа“ — Действия „Мария Склодовска-Кюри“

Период: 2023-07-01 → 2026-06-30
Финансиране от ЕС: 297 164 €
Участници: 3
Схема: HORIZON-TMA-MSCA-PF-GF

Линиите свързват координатора с партньорите.

Накратко на български

Двуизмерни материали като графена се изследват, за да се контролира динамично ъгълът на завъртане между техните слоеве чрез електрическо въздействие. Това помага за създаването на пренастройваеми квантови устройства, сензори и оптоелектронни компоненти.

Този кратък обзор е генериран от изкуствен интелект

Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.

Резултати накратко

Electrostatic actuation of 2D-materials-based heterostructures for in situ twistronics

The development of advanced, energy-efficient, and miniaturized electronic devices is driving the need for new materials and innovative engineering solutions. Among these, two-dimensional (2D) materials, such as graphene and hexagonal boron nitride (hBN), stand out due to their extraordinary properties and the possibility of stacking them into van der Waals (vdW) heterostructures with tailored functionalities. In particular, the concept of “twistronics,” where the electronic and optical properties of 2D heterostructures can be tuned by controlling the relative twist angle between layers, has opened a new frontier in material science and quantum technology. However, current fabrication methods allow only static control of the twist angle, limiting both the scientific exploration of emergent phenomena and the development of practical devices. The 2DTWIST project aims to overcome these limitations by developing a platform for dynamic, in situ control of the twist angle in 2D heterostructures. The main objectives are: (1) the design and fabrication of electrostatic actuators based on 2D materials, capable of inducing controlled angular motion between stacked layers; (2) the implementation and optical/electrical characterization of dynamically twistable graphene/hBN heterostructures; (3) the demonstration of operando modulation of moiré patterns and their associated quantum phenomena. These advances are expected to lay the foundation for new classes of reconfigurable quantum devices, sensors, and optoelectronic components, thus addressing key scientific and technological challenges identified at the European and international levels.

Текст от CORDIS, на английски · Данни: CORDIS, © Европейски съюз

Цел на проекта

The discovery of superconductivity in twisted bilayer graphene in 2018 gave rise to twistronics. Twistronics is the study of how the reciprocal angle between layers of two-dimensional materials can modify their properties. Twisted structures present a Moiré lattice and exhibit very different electronic behavior, from non-conductive to superconductive, which depends significantly on the angle between the layers. To date, several techniques have been developed to fabricate layered heterostructures with controlled rotation between the layers, but the Moiré patterns have largely been static. Recent works have demonstrated the tuning of Moiré patterns by using the atomic force microscopy technique to rotate adjacent layers, allowing to study the evolution of properties as the twist angle varies. Dynamic control of rotatable heterostructures will provide a relatively simple platform for exploring exotic quantum effects. Thanks to the observation of these phenomena, a new playground will be created with disruptive technological repercussions, from quantum computing to optoelectronics. In 2DTWIST, I will develop a new technique that allows active, dynamic, and automated control of Moiré geometry in 2D heterostructures in a single device, allowing more precise positioning and in-situ twist of adjacent layers, by electrostatic actuation. Thanks to this approach it will be possible to explore how emergent properties depend on Moiré geometry and to achieve controlled and uniform properties within a single device.

Оригинален текст от CORDIS (на английски).

Участници

POLITECNICO DI TORINO · TorinoКоординаторИталия
EIDGENOSSISCHE MATERIALPRUFUNGS- UND FORSCHUNGSANSTALT · DubendorfШвейцария
FONDAZIONE ISTITUTO ITALIANO DI TECNOLOGIA · GenovaИталия