HEИндивидуална стипендия2024–2025

ACCESS · Engineering Spin-Splitting in Atomically Thin 2D Non-Centrosymmetric Crystals

„Хоризонт Европа“ — Действия „Мария Склодовска-Кюри“

Период
2024-01-01 → 2025-12-31
Финансиране от ЕС
181 153 €
Участници
2
Схема
HORIZON-TMA-MSCA-PF-EF

Линиите свързват координатора с партньорите.

Накратко на български

Атомно тънки материали, като двуслойния графен, се променят чрез завъртане или подреждане, за да се постигне нов електрически отговор. Това помага за създаването на по-бързи електронни устройства с ниска консумация на енергия и по-малко отделяне на топлина.

Този кратък обзор е генериран от изкуствен интелект

Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.

Резултати накратко

Engineering Spin-Splitting in Atomically Thin 2D Non-Centrosymmetric Crystals

ACCESS explored how ultra‑thin materials only a few atoms thick can be engineered to behave in entirely new electrical ways by deliberately breaking their natural symmetries. By twisting, stacking, or electrically tuning materials like bilayer graphene and WTe2, the project created nonlinear electrical responses—effects that could enable future low‑power electronics, ultra‑sensitive sensors, and advanced energy‑harvesting technologies. At the same time, ACCESS supported the professional growth of the researcher through international collaboration, mentoring, and research training. Together, the project’s scientific and career‑development goals were achieved, leading to new discoveries and ongoing collaborations in this rapidly advancing field. The information and communication technology (ICT) sector consumes approximately 10% of global electricity, which is expected to further increase sharply in the coming decade. At the same time, the back-bone of ICT, the computing processors, and memory devices are hitting the physical limits of transistor miniaturization, where further scaling leads to prohibitive heat loss. To build faster, more efficient electronic devices, ACCESS focuses on atomically thin van der Waals (vdW) materials. By deliberately breaking their symmetry—through twisting, stacking, or electrical tuning—we induce a novel nonlinear electrical response. These effects open the door to ultra-low-power switches and integrated energy-harvesting capabilities. Furthermore, these same symmetry-breaking conditions enhance charge-to-spin conversion, a cornerstone of spintronics. These positions vdW materials as a key platform for merging energy-efficient charge-based logic with advanced spin-based functionality. ACCESS aims to unlock new ways of controlling the flow of electricity in atomically thin vdW materials by stacking and twisting them with extreme precision. By engineering these delicate structures, we seek to reveal how their internal symmetries, electric polarization, and unique “moiré” patterns influence the way electrons move and interact. ACCESS will develop advanced fabrication methods to build complex stacks of two-dimensional materials, use electric fields to break or manipulate their natural symmetries, and explore how these changes give rise to unusual electrical responses that do not occur in ordinary materials. Ultimately, the goal is to understand how twisting, symmetry, and polarization can be harnessed to create new forms of electronic behavior, paving the way for future low-energy technologies, smarter sensors, and devices that use the strange rules of quantum physics to perform tasks that today’s electronics cannot. In addition to these scientific objectives, ACCESS also focuses on strengthening the researcher’s transferable skills, preparing him to become an independent scientist. The scientific excellence and interdisciplinary natures of the host organizations also provide the researcher with a unique opportunity to work with world leaders in the relevant fields, helping the researcher to build his research career in Europe.

Текст от CORDIS, на английски · Данни: CORDIS, © Европейски съюз

Цел на проекта

The information technology and communication sector (ICT) has been undergoing remarkable progress fuelled by integrational advancements in its building blocks, the field effect transistor (FET). The FETs in commercials microprocessors still use more than half a century old energy-intensive conductance switching processes to perform logic operations. It is well understood that the inability to remove the dissipated energy in such switching process will eventually stop the ongoing downscaling of the microprocessors in the next few years. Spintronic-based devices, working by virtue of energy efficient switching the spin-polarization, are considered to bring a paradigm shift in logic operations. Such devices use charge-to-spin interconversion (CSI) which is maximized in materials with strong spin-orbit coupling (SOC). The main goal of ACCESS is to engineer inversion symmetry and SOC in vertical heterostructures of two-dimensional layered materials (2DLMs) to facilitate the CSI process. We shall fabricate dual gated hBN encapsulated FETs using the 1T' phase of transitional metal dichalcogenides and its twisted bilayers to tune symmetry and SOC. ACCESS will exploit the Edelstein effect and intrinsic Berry curvature dipole to generate current-induced magnetization and detect it via unidirectional magnetoresistance (UMR) and nonlinear Hall effect (NHE) measurements. The CSI in our samples will be further tuned by dynamically varying vertical displacement field and the charge carrier density in the channel. By this way, ACCESS will harness the topological properties of 2DLMs for applications in future spintronics devices, capable of magnet-free spin-to-charge interconversion. Besides its scientific goals, ACCESS also focuses on strengthening the researcher’s transferable skills and providing him a high-quality interdisciplinary research training, helping him to build a promising scientific research career.

Оригинален текст от CORDIS (на английски).

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Данни: CORDIS, © Европейски съюз