HEИндивидуална стипендия2023–2026

2DMEM · Revealing the physics of switching mechanism in 2D materials based memristor devices (2DMEM)

„Хоризонт Европа“ — Действия „Мария Склодовска-Кюри“

Период
2023-10-01 → 2026-03-31
Финансиране от ЕС
199 694 €
Участници
1
Схема
HORIZON-TMA-MSCA-PF-EF

Линиите свързват координатора с партньорите.

Накратко на български

Двуизмерните материали в мемристорите се анализират, за да се разбере как атомните дефекти и движението на йони променят електрическото им съпротивление. Това помага за създаването на по-надеждна и енергоефективна хардуерна база за изкуствен интелект и компютърни системи.

Този кратък обзор е генериран от изкуствен интелект

Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.

Резултати накратко

Revealing the physics of switching mechanism in 2D materials based memristor devices (2DMEM)

The rapid expansion of artificial intelligence, data-intensive technologies, and edge computing is creating an urgent demand for energy-efficient and scalable hardware. Conventional semiconductor memory technologies are approaching fundamental limits, forming a critical bottleneck for future computing systems. Two-dimensional material (2DM)-based memristors offer a promising alternative, enabling ultra-low-power operation, high integration density, and neuromorphic functionality. However, their deployment is limited by a lack of predictive understanding of the atomic-scale mechanisms governing resistive switching. The 2DMEM project addresses this challenge by developing a physics-based framework for resistive switching in transition-metal dichalcogenide (TMD) memristors under realistic conditions. It focuses on the roles of atomic defects, ion migration, and structural effects, which critically influence device performance and reliability. The project combines atomistic modelling, first-principles simulations, and quantum transport methods to move beyond simplified descriptions toward predictive modelling. It develops experimentally grounded atomic models, quantifies electric-field-driven migration processes, and determines how strain and device geometry affect stability and functionality. By linking atomic-scale processes to measurable device characteristics, the project bridges the gap between materials physics and device engineering. This approach enables the rational design of reliable, energy-efficient memristor technologies. The results provide strategies to reduce variability, improve reliability, and optimize switching performance, supporting industrial adoption. In the medium to long term, these advances contribute to low-power computing architectures capable of addressing the growing energy demands of digital infrastructure. The project aligns with European priorities in semiconductor innovation, advanced materials, and energy-efficient digital technologies, strengthening technological competitiveness. Overall, 2DMEM represents a shift from descriptive to predictive modelling of resistive switching, laying the foundation for future advances in memory devices and next-generation computing systems.

Текст от CORDIS, на английски · Данни: CORDIS, © Европейски съюз

Цел на проекта

One of the most promising non-volatile memory devices and a building block of brain-inspired neuromorphic computing architectures is memristors. The advent of two-dimensional materials (2DMs) has opened a plethora of opportunities in realizing ultra-scaled device dimensions for future logic and memory applications. Despite different hypotheses proposed in the literature, mainly based on analytical models, significant debate is still ongoing, demonstrating the need for a systematic and atomic-scale study. 2DMEM aims to reveal the fundamental physics lying behind each step of device functionality, e.g., SET and RESET. 2DMEM builds on the complementarity of my strengths on investigating the electronic properties of 2DMs, and simulation expertise and infrastructure at the Host Institution, Tyndall, where access to a large interdisciplinary suite of experimental data on the fabricated 2DM memristors is uniquely available. 2DMEM’s specific objectives are to exploit the experimental data of 2DM properties, and to incorporate ‘realistic’ material and device features into crossbar structures by employing an advanced simulation platform. My career development will benefit from the supervision of Dr Lida Ansari, with the mentorship of Profs Paul Hurley, Stephen Fahy and Dr Farzan Gity, who are established research leaders at Tyndall and at Ireland’s materials research center (AMBER). Through this Fellowship, I will develop my scientific, transferable, and management and leadership skills. These skills are essential for achieving my primary career objective of developing into an independent research leader, and will increase my employability in the academic sector. This MSCA Fellowship also creates a unique starting point for me to directly interact with INTEL, who have expressed great interest in this project, through their R-in-R at Tyndall. This will open up additional possibility of leading impactful research projects and fostering industry-academia collaborations.

Оригинален текст от CORDIS (на английски).

Участници

  • UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK · CorkКоординаторИрландия

Връзки

Данни: CORDIS, © Европейски съюз