Defect M · Defect passivation for two-dimensional (2D) magnetic semiconductors

Линиите свързват координатора с партньорите.

Накратко на български

Цел на проекта

The unique integration of magnetic and semiconducting properties in 2D magnetic semiconductors opens new opportunities for controlling charge and spin degrees of freedom, crucial for developing advanced spin-based technologies. Among these materials, 2D van der Waals CrSBr stands out due to its strong coupling between magnetic and electronic structures. However, the unexplored passivation strategies and unclear defect mechanisms hinder its advancement for nanoscale opto-spintronic devices. Defect M is designed to establish innovative chemical passivation methodologies to achieve high-quality and stable 2D CrSBr with a comprehensive understanding of defect physics, which not only allows us to gain a better understanding of the degradation mechanism but is also critical to enable reliable studies of spin- and charge-based phenomena. This highly interdisciplinary project facing key future technologies will pave the way for next-generation spin-based devices and benefit the upcoming EU's priorities of digital transformation and green transition.

Оригинален текст от CORDIS (на английски).

Участници

• UPPSALA UNIVERSITET · UppsalaКоординаторШвеция

Връзки

• Виж в CORDIS
• DOI: 10.3030/101206145