Nanometer scale characterisation of ulsi-structures

Линиите свързват координатора с партньорите. За проекти отпреди 2014 г. CORDIS не винаги дава точни координати. Тези точки са на ниво град или държава.

Накратко на български

Цел на проекта

Research objectives and content The continued downscaling of ULSI-devices has placed an emphasis on very precisely controlling device structure and dopant distributions, enforcing the need for metrology tools with nm-resolution. Several concepts based on Atomic Force Microscopy have been proposed to address the electrical characterization and carrier profiling of devices. Their practical implementation as well as application to ULSI-structures is the objective of the present project. Focus of the research will be on establishing the properties of these methods and inter-relating the results to the predictions of process and device simulators. Training content (objective, benefit and expected impact) The combination of tool development and applications pursued in this project contributes to the training of the candidate as well as the host institute. The exposure to the demands related with submicron development provides the candidate with a unique opportunity to enhance his knowledge in the field of submicron device technology and physics whereas his vast experience in developing AFM-based tools, will reinforce the scientific base at Imec in this field. Links with industry / industrial relevance (22) The industrial needs for 2D-carrier profiling in devices, has placed this item as one of the highest priority themes on the National Technology Roadmap of the Semiconductor Association.

Оригинален текст от CORDIS (на английски).

Участници

• INTERUNIVERSITAIR MIKRO-ELEKTRONICA CENTRUM VZW · HEVERLEEКоординаторБелгия
• Not availableНиво градОбединеното кралство

Връзки

• Виж в CORDIS