Study of thin dielectrics films by scanning thermal microscopy and complementary techniques
4РП — Обучение и мобилност на изследователи
- Период
- 1997-10-01 → 1998-09-30
- Финансиране от ЕС
- —
- Участници
- 2
- Схема
- RGI
Линиите свързват координатора с партньорите. За проекти отпреди 2014 г. CORDIS не винаги дава точни координати. Тези точки са на ниво град или държава.
Накратко на български
Тънките диелектрични слоеве в микроелектрониката се анализират чрез сканираща термомикроскопия и други физикохимични методи. Това помага за по-доброто разбиране на разсейването на топлината в мощните електронни устройства.
Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.
Цел на проекта
Research objectives and content The question of power dissipation is a challenging issue for ULSI microelectronics power devices. The purpose of the project is to study thermal properties of very thin dielectrics films by a new and promising nanotechnique: scanning thermal microscopy. The study will involve the development of the thermal microscope, focusing on the reliability of measurements and the microscope capability to yield quantitative information on thin layers thermal properties. After testing the microscope on simple and well-known samples, thin layer of dielectrics, chosen for their potential applications in power devices, will be studied. These samples will also be characterised with different techniques: other scanning probe microscopy, nuclear and optical techniques, to obtain a complete knowledge of their physical and chemical properties. Training content (objective, benefit amd expected impact) The project requires experimental skills and leads to the development of a new characterization method of very thin films implying a clear comprehension of the involved physical phenomena. This will greatly extend my competence to the field of nanotechnology as well as deepen my knowledge of thin films. Links with industiy / industrial relevance (22) The project is conducted in close collaboration with the SGS-Thomson site of Agrate Bianza (MI) where the MDM laboratory is located. This special situation favores technological transfert from university research laboratory to microelectronics industry.
Оригинален текст от CORDIS (на английски).
Участници
Връзки
Данни: CORDIS, © Европейски съюз