Structure investigation of laterally patterned semiconductor structures by high resolution x-ray diffraction and topography
4РП — Обучение и мобилност на изследователи
- Период
- 1997-12-01 → 1999-11-30
- Финансиране от ЕС
- —
- Участници
- 2
- Схема
- RGI
Линиите свързват координатора с партньорите. За проекти отпреди 2014 г. CORDIS не винаги дава точни координати. Тези точки са на ниво град или държава.
Накратко на български
Полупроводникови структури, като квантови точки и жици, се анализират чрез високоразрешаваща рентгенова дифракция. Това помага за оптимизиране на производството и разбирането на дефектите, които влияят върху работата на лазерите и сензорите.
Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.
Цел на проекта
Research objectives and content Mesoscopic superstructures such as superlsttices, surface grstings, quantum well wires (QWW) Quantum dots (QD) play a Central role for the design of new micro- and Optoelectronic devices as as for basic physics. Such structures are successfully prepared for high power laser applications, used sensoric techniques, laser radar.... The project contains two main goals. Firstly, in order to optimize the growth- and fabrication process, influence of the relevant parameters shall be studied. Therefore several electrical, Optical and struc Characterization methods are employed. High resolution X-rsy scattering methods are required as n destructive techniques, Complementary to electron microscopically methods for the struc Characterization. The new high resolution X-rcy diffractometer, installed at the beamline ID 19 combi the unique properties of the ESRF as X-rcy source with the advantages of high resolution multiple cry arrangements. That will allow us to determine the perfection of the artificial layered superstructure, quality of the layer interfaces as well as defects and lattice deformation in the crystalline structure, wt are of crucial importance for the function of the lasers. The second goal is the investigation of residual stress and defect generation during lsser Operation. Here the X-rsy diffraction techniques are the only methods which enable an in-situ struc characterization important for the laser degradation processes. Training content (objective, benefit and expected impact) The applicant will become acquainted with the fabrication process and the physical propertie mesoscopic semiconductor structures for the Optoelectronic. He will expand his knowledge about novel X-ray scattering techniques in Combination with the peculiarities of the third genera synchrotron. Links with industry / industrial relevance (22) Links with industry clearly exist through the Applied Physics institutes Collaborating in the present project
Оригинален текст от CORDIS (на английски).
Участници
Връзки
Данни: CORDIS, © Европейски съюз