FP4Индивидуална стипендия1997–1999

Construction and characterisation of hybrid si/high temperature superconductor field effect transistors

4РП — Обучение и мобилност на изследователи

Период
1997-12-08 → 1999-12-07
Финансиране от ЕС
Участници
2
Схема
RGI

Линиите свързват координатора с партньорите. За проекти отпреди 2014 г. CORDIS не винаги дава точни координати. Тези точки са на ниво град или държава.

Накратко на български

Хибридни транзистори от силиций и високотемпературни свръхпроводници се използват за създаване на прототип на паметна клетка. Тези компоненти помагат за разработването на устройства, оптимизирани за работа при много ниски температури.

Този кратък обзор е генериран от изкуствен интелект

Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.

Цел на проекта

Research objectives and content We propose to develop a p-channel Insulator Superconducting-Gate Silicon Field-Effect Transistor (ISGSFET) which will used for creating a prototype of a lT/lC memory cell. Such a cell is a building block for a Ferroelectric Random Access Memory (FERAM) based on a silicon/high temperature superconductor (HTS)/ferroelectric heterostructure. This is a first attempt in making a complete hybrid Si/HTS memory device optimised for operation at low temperatures. The project is divided in two parts. The first part consists of the construction and characterization of the ISGSFETs. The second is the building of a prototype of a Si/YBa2Cu307-x/(SrxBal-x)TiO, memory cell. The ion implantation and the project the transistor structures will be done in close collaboration with the Institut Eur Mikrotechnik Mainz (IMM). All the steps related to the deposition and patterning of the superconducting and ferroelectric oxides will be done at the Institut fur Phy of the U. Mainz. Training content (objective, benefit and expected impact) The candidate will learn about the epitaxial growth of HTS and other oxides like YSZ and CeO2on silicon. He will be abl interact with experienced professionals in the field of design and fabrication of Integrated Circuits. At the end of the proje the strong background in superconductivity and cryogenics will be fundamental for the investigation of the properties of t devices. Links with industry / industrial relevance (22) The group has long term collaborations with the Research Laboratories of the Daimler Benz AG and the Hoechst AG in Frankfurt (Germany). New research projects in collaboration with the Institute for Micro-mechanics Mainz (IMM) are in preparation. This is a profit oriented state owned enterprise which is operated under private corporate law.

Оригинален текст от CORDIS (на английски).

Участници

Връзки

Данни: CORDIS, © Европейски съюз