Scanning electron microscopy and scanning tunneling microscopy characterization of semiconductors

Линиите свързват координатора с партньорите.

Накратко на български

Цел на проекта

Scanning electron microscopy and scanning tunneling microscopy characterization of semiconductors. Research training is offered in characterization of electronic and optical properties of semiconductors by different microscopy and spectroscopy techniques. In particular, problems related to the nature and distribution of defects, electronic levels, electronic recombination properties, luminescence, surface effects etc. are investigated with high spatial resolution. Characterization techniques sometimes referred as Advanced Scanning Electron Microscopy, as Cathodoluminescence and Electron Beam Induced Current will be used and will be complemented by X-ray microanalysis, X-ray diffraction and electrical spectroscopies. Scanning tunneling microscopy and spectroscopy are applied to characterize electronic materials and to perform correlative studies of electron microscopy and tunnelling microscopy. The tunneling spectroscopy methods enable to investigate surface electronic properties as surface band gap or surface density of states. The activity on micro structural characterization of electronic materials by microscopy methods has been carried out in our Department for more than 20 years and local electronic properties of different III-V, II-VI compounds, Si, diamond or High- T_c superconductors have been investigated. The offered training can be of interest to Ph. D. students, involved in studies of semiconductors (bulk, nanocrystals, heterostructures...). Candidates should be post-graduates in Physics, Materials Science, Electronics or equivalent, but not specific experience is required.

Оригинален текст от CORDIS (на английски).

Участници

• UNIVERSIDAD COMPLUTENSE DE MADRID · MADRIDКоординаторИспания

Връзки

• Виж в CORDIS