ULTRASWITCH · Ultrafast magnetic switching for advanced devices
5РП — Човешки потенциал в науката
- Период
- 2002-09-01 → 2006-08-31
- Финансиране от ЕС
- 1 500 000 €
- Участници
- 11
- Схема
- NET
Линиите свързват координатора с партньорите. За проекти отпреди 2014 г. CORDIS не винаги дава точни координати. Тези точки са на ниво град или държава.
Накратко на български
Сверхбързото превключване в магнитни структури, например при създаването на памет за компютри, се изучава чрез нови физични механизми. Това помага за увеличаване на плътността на съхранение на данни и по-бърз достъп до тях.
Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.
Цел на проекта
The ULTRASWITCH network addresses the field of ultra fast switching phenomena in magnetic submicron structures for applications such as magnetic sensors, magnetic random access memory elements and media for magnetic recording. It provides advancement of science, development of new routes for ultra fast switching and the training of 12 - 1 7 young researchers to provide the work force for tomorrows research, development and production in Europe in a strongly expanding field. The strong demand for continuing increase of data storage density and access time poses a strong challenge in particular on the exploration and development of new schemes for ultra fast applications. This can only be achieved by a combined action of the leading research groups in this field strongly inter-linked with leading industry. The ULTRASWITCH network comprises seven leading laboratories and three industrial companies to meet this challenge. The network is aimed to overcome the severe switching speed problems in devices, caused by the crossing of the access rate with fundamental time scales, such as the precession frequency. It focuses on coherent switching phenomena as the projected most successful path to stable magnetic switching in sub-nanosecond applications. As one example, in the area of magnetic random access memory, the ULTRASWITCH network will contribute to the scientific background to ultra fast memory designs in future memory applications.Objectives arei) the development and the testing of new concepts for ultra fast switching, like, e.g., spin injection assisted switching,ii) the investigation of the underlying physical mechanisms, in particular the microscopic understanding of the magnetic damping mechanisms,iii) the investigation of the decay channels on the femtosecond time scale, and iv) issues of thermal stability and limits of magnetic storage. Test structures comprise devices with lateral dimensions which are progressively kept below those defined by the
Оригинален текст от CORDIS (на английски).
Участници
- TECHNISCHE UNIVERSITÄT KAISERSLAUTERN · KAISERSLAUTERNКоординаторНиво градГермания
- CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · PARISФранция
- CENTRO RICERCHE FIAT S.C.P.A · ORBASSANOИталия
- EINDHOVEN UNIVERSITY OF TECHNOLOGY · EINDHOVENНидерландия
- IBM DEUTSCHLAND SPEICHERSYSTEME GMBH · MAINZГермания
- INSTITUTO DE ENGENHARIA DE SISTEMAS E COMPUTADORES · PORTOПортугалия
- INTERUNIVERSITAIR MIKRO-ELEKTRONICA CENTRUM VZW · HEVERLEEБелгия
- SIEMENS AG · MUENCHENГермания
- UNIVERSITE DE PARIS-SUD XI · ORSAYФранция
- UNIVERSITY OF DURHAM · DURHAMОбединеното кралство
- UNIVERSITY OF GLASGOW · GLASGOWОбединеното кралство
Връзки
Данни: CORDIS, © Европейски съюз