PRIDE · Processing and Irradiation Defect Engineering in Advanced CMOS Technology
6РП — Действия „Мария Кюри“
- Период
- 2004-01-01 → 2004-08-31
- Финансиране от ЕС
- 144 021 €
- Участници
- 1
- Схема
- EIF
Линиите свързват координатора с партньорите. За проекти отпреди 2014 г. CORDIS не винаги дава точни координати. Тези точки са на ниво град или държава.
Накратко на български
Дефектите в силициевите CMOS чипове и тяхната устойчивост при облъчване се анализират, за да се разбере как да се преместят или премахнат. Това помага за удължаване на живота на търговските компоненти, използвани в космическата електроника, което намалява разходите и вредните емисии.
Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.
Цел на проекта
The overall objective is to built up expertise in the field of material science related to deep sub micron CMOS processing and to investigate the irradiation hardness of these technologies. This requires a clear understanding of different disciplines such as material characterization, defect studies, silicon processing, and electrical device characterization and irradiation studies. Due to the large number of processing steps in CMOS technology it is essential to either remove the process-induced defects or at least drive them towards the inactive regions of the components. This control effort is called defect engineering and guttering. Beside the process-induced defects, additional defects can also be created during the device operation having direct consequences on the lifetime of the components. The space community is more and more using the Commercially-of-the-Self (COTS) approach. This means that instead of dedicated components, fabricated in hardened technologies, commercial parts fabricated in mainstream CMOS are used for space electronics. Increasing the lifetime of components will reduce the cost, save energy and reduce the emission of greenhouse gases. A fundamental study of the nature and structure of such defects is thus necessary to advance in technological applications, in particular in the miniaturization of components. For the applicant it is a unique opportunity to work on state of the art research topics, for which there is world- wide large interest. The proposed research plan is covering a broad range of topics, combining activities on material science, silicon processing and irradiation physics. It also allows building up expertise on how to conduct a large joint research program in an international environment. The training will not only be performed at a pure scientific level, but also at a higher level including social aspects such as team building, multi-racial and multicultural interactions, and managerial skills.
Оригинален текст от CORDIS (на английски).
Участници
- INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM VZW · LEUVENКоординаторНиво градБелгия
Връзки
Данни: CORDIS, © Европейски съюз