FP6Реинтеграция2006

STM-MIDAS · Scanning Tunneling Microscopy - Modeling Defects and Adsorbates onSemiconductors and Insulating Films

6РП — Действия „Мария Кюри“

Период
2006-01-01 → 2006-12-31
Финансиране от ЕС
39 500 €
Участници
1
Схема
ERG

Линиите свързват координатора с партньорите.

Накратко на български

Теоретичното моделиране на сканиращата тунелна микроскопия помага за разясняване на дефекти върху полупроводници и ултратънки изолиращи слоеве. Това е важно за интерпретирането на експериментални данни и развитието на наноканалета в нанотехнологиите.

Този кратък обзор е генериран от изкуствен интелект

Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.

Цел на проекта

This research deals with modeling of Scanning Tunneling Microscopy (STM) and Spectroscopies (STS) in studying defects and adsorbates on ultrathin insulating films and semiconductor surfaces. Theoretical modeling of STM is a necessary part in interpreting e xperimental data, and also in planning future experiments. The objectives of this research project are twofold. First, this project will serve as further training for a post doctoral researcher, Dr. Sami Paavilainen, to prepare working as an independent re searcher. The second objective is to develop and utilize different methods in analyzing the STS and STM experiments. The methods will include density functional theory calculations, tight-binding model and models for elastic and inelastic tunneling in diff erent tunneling junctions.Insulating films on metal surfaces can be studied with STM if they are thin enough. Thin insulating films are also interesting due to their prospects in nanotechnology where the decoupling of adsorbates from the metal could be uti lized, e.g., in production of nanocircuits. The modeling of STS of these films is complicated, since defect and adsorbate states form a double barrier tunneling junction.For semiconductors, our interest lies in the Cross-sectional STM (X-STM) which allows one to study formation of defects and segregation in epitaxial growth of compound semiconductors. Because STM probes contours of a constant LDOS, heterointerfaces made of different types of atoms on the opposite sides are revealed by image contrast. Modeli ng these subtle effects requires also combining different methods.The group has a wide cooperation with top-class experimental STM groups in Europe. In addition, collaboration inside the local university has a significant role in this project.

Оригинален текст от CORDIS (на английски).

Участници

Връзки

Данни: CORDIS, © Европейски съюз