FP6Реинтеграция2005–2007

CMNHFRF · Convergence of microelectronics, nanotechnology and high frequency rf engineering

6РП — Действия „Мария Кюри“

Период
2005-04-01 → 2007-03-31
Финансиране от ЕС
80 000 €
Участници
1
Схема
IRG

Линиите свързват координатора с партньорите. За проекти отпреди 2014 г. CORDIS не винаги дава точни координати. Тези точки са на ниво град или държава.

Накратко на български

Микроелектрониката и новите материали се изследват за създаване на по-ефективни компоненти, като например филтри за радиосигнали, интегрирани директно в чипа. Това помага за намаляване на загубите на енергия и улеснява създаването на по-сложни чипове за безжична комуникация.

Този кратък обзор е генериран от изкуствен интелект

Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.

Цел на проекта

Passive systems such as inductors, capacitors and transformers, integrated on-chip, are essential building blocks of all analogue RFICs and their performance at current and future CMOS processes is a major bottleneck to successful system integration at the single-chip level radios at high frequencies. Further, this bottleneck prevents a larger-scale integration of more complicated analogue stages essential for wireless communication chips, most notably of filters, which currently remain off-chip. Part of the problem relates to physical properties of standard CMOS processes, i.e., metal and substrate losses and couplings. Another part is the inadequacy of lumped-element design rules for correctly accounting for fully electromagnetic physical effects at high frequencies.Finally, absence of multi-disciplinary research linking the above physical and RF design problems to a synthesis cycle of CMOS-compatible material processes with optimised high-frequency material properties, possibly including composite electromagnetic materials and photonic crystals. This proposal will contribute to remedying these deficiencies in a technologically relevant way, by: First, using novel material Si processes, such as porous Si patterned with high-K or alumina dielectrics, to analyse and optimise the full-wave electromagnetic design of on-chip high-Q passives. It will then use these optimised cells to derive a comprehensive design methodology for on-chip pass-band filters, including accurate broadband circuit models, where the remaining technology process loss will be mapped to the appropriate circuit sub-topologies. Lastly, these losses will be cancelled by the insertion of appropriately optimised FET interconnections of minimum noise figure, to complete a realistic on-chip filter design cycle directly implementable to the semiconductor industry.

Оригинален текст от CORDIS (на английски).

Участници

  • NATIONAL CENTER FOR SCIENTIFIC RESEARCH DEMOKRITOS",INSTITUTE OF MICROELECTRONICS" · AGHIA PARASKEVI - ATHENSКоординаторНиво градГърция

Връзки

Данни: CORDIS, © Европейски съюз