SENFED · Semiconductor Nanowires and their field effect devices
6РП — Действия „Мария Кюри“
- Период
- 2006-10-01 → 2010-09-30
- Финансиране от ЕС
- 1 020 792 €
- Участници
- 1
- Схема
- EIF
Линиите свързват координатора с партньорите.
Накратко на български
Полупроводникови наножици от силиций и галий арсенид се изследват чрез създаване на нови кристални структури и използване на алтернативни катализатори. Това помага за подобряване на електрическите и оптичните свойства на устройствата, които се използват за сензори.
Кратко обяснение, генерирано от езиков модел по текста на CORDIS. Оригиналът е по-долу.
Резултати накратко
Final Activity Report Summary - SENFED (Semiconductor Nanowires and Their Field Effect Devices)
SENFED has involved research in the area of semiconductor nanowires and the realisation of field effect devices for sensing applications. In the following, we present the list of declared challenges and how we have solved them: (i) Mastering of final structural properties. Synthesis of novel crystalline structures: Due to the small size of nanowires and the large surface-to-volume ratio, nanowires can be found in crystalline phases different from their bulk counterparts. The ability to produce new crystalline phases in a controlled way opens new perspectives for bandgap engineering and thereby the creation of novel nanowire devices. In this project we have demonstrated the synthesis of nanowires with zinc-blende (cubic) and wurtzite (hexagonal) crystal structure. We have shown this for silicon and gallium arsenide nanowires. We have studied this first from the structural point of view by transmission electron microscopy and from the functional point of view by photoluminescence spectroscopy. With this we have been able to show for the first time the advantages of combining the two crystalline structures. (ii) Synthesis of nanowires catalyst-free or with alternative metal catalysts: One of most common method for synthesis of nanowires a metal catalyst seed is required. In many studies gold (Au) is the chosen metal, resulting into trace concentrations of the metal within the wires. As gold is a known deep-level impurity in semiconductors, its presence significantly reduces the quality of electrical and optical characteristics. We have developed new methods for the synthesis of Si, GaAs and Ge nanowires with alternative catalysts such as Cu, Ga, In and Bi. In this way we have sown how the resulting properties of the nanowires can be much further improved. (iii) CMOS compatible realisation of nanowire devices for electronic and sensing applications: We have fabricated novel kinds of sensors by fabricating anodised alumina layers directly on a silicon chip. We have also used the structures as water compatible sensors. Additionally, we have studied the integration of various types of nanowire arrays for the use as a sensor.
Текст от CORDIS, на английски · Данни: CORDIS, © Европейски съюз
Цел на проекта
Nanowires are filamentary crystals with a very high ratio of length to diameter, the latter being in the nanometre range. From a fundamental point of view, semiconductor nanowires are of significant interest because they exhibit new physical and chemical properties owing to their large surface-to-volume ratio, low dimensionality and confinement in one dimension. From a technological perspective, they constitute attractive building blocks for the assembly of novel nano-electronic and nano-photonic systems, a s well as biochemical sensors. This proposal combines three complementary aspects of semiconductor nanowires: synthesis, characterization of their structural, optical and electronic properties, and application to field effect devices. All three aspects w ill run semi-simultaneously in and inter-related way. The synthesis oriented part of the project will concern the study of the growth mechanisms of nanowires, the synthesis with alternative catalysts and the understanding of the synthesis of new crystallin e structures. In parallel with the synthesis studies, the optical and electronic properties of the nanowires at low temperatures will be fully characterized. In order to deterministically dispose the nanowires on a substrate, for the adequate electrical characterization, the fabrication of horizontal porous alumina as templates for nanowires will also be studied. Finally, the initial results and methodologies will be combined to the realization of field effect devices, both electrically and chemically gated.
Оригинален текст от CORDIS (на английски).
Участници
- TECHNISCHE UNIVERSITAET MUENCHEN · MUENCHENКоординаторГермания
Връзки
Данни: CORDIS, © Европейски съюз